Abstract: A focal plane array sensor includes optics located along an optical path, for transmitting radiation. A focal plane array and integrated circuit, located along the optical path for receiving the transmitted radiation, responsively produces image signals from the transmitted radiation. The integrated circuit includes apparatus for converting the image signals into digital image data at digital image data outputs.

Abstract: Methods and apparatus for compensating a radiation sensor for ambient temperature variations. Ambient temperature variations may produce undesirable artifacts in electronic signals output by a radiation sensor. In some cases, such artifacts may detrimentally reduce the dynamic range of the sensor and/or processing circuitry associated with the sensor with respect to radiation of interest. The radiation sensor may be compensated for such undesirable artifacts by, for example, adding an appropriate offset to a sensor bias voltage or a sensor bias current, and/or controlling a temperature of the radiation sensor, based on variations in the ambient temperature.

Abstract: An offset corrector for a focal plane array. A bolometer array configured in a row and column readout format has dedicated column circuits to measure the resistance of each bolometer in the column. A high speed on-chip analog to digital converter converts the analog sensor signal to a digital representation. Since the response of each bolometer varies, an offset controller, connected to the output of the analog to digital converter, corrects the digital representation for variations in individual bolometer response. Each pixel has a corresponding dynamically computed offset stored in the memory. The offset is computed when a chopper or shutter blocks radiation from the focal plane array. The focal plane array is temperature stabilized to a predetermined temperature to keep bolometer response within a predetermined bandwidth.

Abstract: An array of infrared sensitive bolometric detectors. The bolometers are connected across row and column readout lines. Integrated on the array are column signal processors that measure the resistance of each bolometer. Each column signal processor stores the output of a bolometer on an integrator. The array is temperature stabilized to a predetermined temperature to keep bolometer response within a predetermined bandwith.

Abstract: An analog comparator compares an analog signal to be converted with an analog ramp signal. The output of the comparator enables a digital latch having a binary Gray code counter input. When the analog ramp equals the analog signal, the digital latch captures the state of the Gray code counter. Metastability in the digital latch is resolved by a latch train. The Gray coded output is then decoded by a Gray decoder to a standard binary output. An array of converters are constructed on a monolithic integrated circuit where each converter shares a single analog ramp generator, binary Gray code counter and Gray decoder. A multiplexer selects a particular converter and switches the standard binary output from the selected converter to line drivers to be used off-chip. The two least significant bits of the Gray code are generated with phase shifting circuits.

Abstract: A dual-band detector that absorbs incident radiation in a first range of wavelengths and that absorbs incident radiation in a second range of wavelengths. The dual-band detector includes a semiconductor substrate and a first microbridge detector level disposed above the semiconductor substrate. The first microbridge detector level includes an active area that absorbs incident radiation in one of the first range of wavelengths and the second range of wavelengths. In one embodiment, the semiconductor substrate includes a detector that detects incident radiation in the other of the first and second range of wavelengths. In another embodiment, the dual-band microbridge detector also includes a second microbridge detector level. The second microbridge detector level also includes an active area that absorbs incident radiation in an alternative one of the first range of wavelengths and the second range or wavelengths.

Abstract: A dual-band detector that absorbs incident radiation in a first range of wavelengths and that absorbs incident radiation in a second range of wavelengths. The dual-band detector includes a semiconductor substrate and a first microbridge detector level disposed above the semiconductor substrate. The first microbridge detector level includes an active area that absorbs incident radiation in one of the first range of wavelengths and the second range of wavelengths. In one embodiment, the semiconductor substrate includes a detector that detects incident radiation in the other of the first and second range of wavelengths. In another embodiment, the dual-band microbridge detector also includes a second microbridge detector level. The second microbridge detector level also includes an active area that absorbs incident radiation in an alternative one of the first range of wavelengths and the second range or wavelengths.

Abstract: A microbridge detector is with an active area that is smaller than a pixel collection area of the microbridge detector. The microbridge detector includes a semiconductor substrate on a first level and an microbridge level disposed above the semiconductor substrate. The microbridge level includes the active area having the pixel collection area greater than a square area of the active area of the microbridge detector. In addition, downwardly extending leg portions are a continuation of the microbridge level and support the microbridge level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge level and the semiconductor substrate. Further, electrically conductive paths are included within the downwardly extending leg portions and connect the active area in the microbridge level to the semiconductor substrate.

Abstract: An array of ultrasonic transducers, where each of the ultrasonic transducers has a matching layer end and a driving layer/individually isolated end. A bump bond connects each one of the ultrasonic transducers to a substrate. A high voltage electrical conductor is connected to at least one driving layer/individually isolated end to provide a drive signal to at least one of the ultrasonic transducers. A conductive/matching layer is disposed to electrically connect each matching layer end. An outer matching layer is connected to the conductive/matching layer. The bump bond is an indium or solder bump bond having a contact area for contact with an ultrasonic transducer less than 20 percent of the driving layer/individually isolated end for the contacted ultrasonic transducer so as to provide mechanical stability while reducing cross talk among the plurality of ultrasonic transducers.