Abstract: The present disclosure describes a composite device including first field effect transistor (FET) device and second FET device. First FET device includes first drain, first source, first gate and shielding terminal. First FET device is made of wide-bandgap semiconductor material. Second FET device includes second drain, second source, and second gate. First and second FET devices are electrically connected in cascode configuration for providing a capacitive path between drain and gate terminals of composite device such that current flowing through gate terminal controls slew rate of drain voltage appearing at drain terminal. Cascode configuration includes an electrical connection of first drain to drain terminal, an electrical connection of first source to second drain, an electrical connection of second gate to first gate and gate terminal, an electrical connection of shielding terminal to second source, and an electrical connection of second source to source terminal of composite device.