Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: A groove engraving device and a groove engraving method are provided. The groove engraving device includes: a processing chamber for containing a piece to be processed, a cutter for groove engraving on the piece to be processed, a clamping mechanism for clamping the piece to be processed, a driving mechanism for driving the clamping mechanism to rotate, and a temperature controlling device for controlling a temperature inside the processing chamber to be within a preset temperature range. The clamping mechanism and the cutter are disposed inside the processing chamber, and the clamping mechanism is rotatable with respect to the processing chamber. The temperature controlling device is disposed inside the processing chamber. The groove engraving device can improve the processing efficiency and quality of the groove engraving on the piece to be processed.

Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: An intermediate series-connecting layer, a laminated photovoltaic device and a fabricating method are provided. The intermediate series-connecting layer is light-transmittable; the intermediate series-connecting layer includes a longitudinal conducting layer; and the longitudinal conducting layer is formed by nano-sized conducting columns that longitudinally grow; or the longitudinal conducting layer includes nano-sized conducting units that are separately distributed, and insulating and separating bodies located between neighboring the nano-sized conducting units, and the insulating and separating bodies transversely insulate the nano-sized conducting units. A large quantity of grain boundaries or interfaces are located between the nano-sized conducting columns, and have a poor transverse conducting performance, the longitudinal conducting layer has a poor transverse conducting capacity, the charge carriers are mainly longitudinally transmitted, and there is substantially no transverse current.

Abstract: A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 1021cm?3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

Abstract: A groove engraving device and a groove engraving method are provided. The groove engraving device includes: a processing chamber for containing a piece to be processed, a cutter for groove engraving on the piece to be processed, a clamping mechanism for clamping the piece to be processed, a driving mechanism for driving the clamping mechanism to rotate, and a temperature controlling device for controlling a temperature inside the processing chamber to be within a preset temperature range. The clamping mechanism and the cutter are disposed inside the processing chamber, and the clamping mechanism is rotatable with respect to the processing chamber. The temperature controlling device is disposed inside the processing chamber. The groove engraving device can improve the processing efficiency and quality of the groove engraving on the piece to be processed.

Abstract: A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.

Abstract: A photovoltaic module includes at least one cell unit, and the at least one cell unit is rectangular; the at least one cell unit includes a plurality of cell-string groups that are electrically connected, each of the plurality of cell-string groups includes a plurality of cell strings connected in parallel, and each of the plurality of cell strings includes a plurality of cell connected in series; each of the plurality of cell-string groups has two electrically conductive ends and two side edges located between the two electrically conductive ends; and at least two neighboring instances of the plurality of cell-string groups are arranged in a predetermined mode, wherein the predetermined mode is as follows: one of the two electrically conductive ends of one of the plurality of cell-string groups and one of side edges of the neighboring cell-string group are located on a same straight line.

Abstract: A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i-th cycle period; correcting the PID initial values of the i-th cycle period, and obtaining PID corrected values of the i-th cycle period; and according to the PID corrected values of the i-th cycle period, controlling a crystal growth diameter of the i-th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.