Abstract: The present disclosure provides a method of reducing the thermomechanical stress in the silicon solar cells induced in the interconnection process. The front and rear metal electrodes of the solar cell are provided in such a way that the outermost bonding point between the front metal electrodes and the front interconnects (ribbons or wires) is aligned to the outermost bonding point between the rear metal electrodes and the rear interconnects. The method is applicable to busbar-based interconnection using stringing/tabbing process and wire-based interconnection such as Multi-Busbar and smart wire connection technology. The method can be applied to both mono-facial and bifacial solar cells. The reduced-area busbar end in the busbar-based interconnection increases the tolerance of misalignment of the outermost bonding points introduced by the manufacturing processes.

Abstract: The present disclosure relates to the field of photovoltaic technologies. Disclosed are a solar cell and a photovoltaic module. The solar cell includes: an absorption layer; and an energy selective contact layer located on a surface of the absorption layer, the energy selective contact layer having selectivity for electron energy or hole energy, and the material of the energy selective contact layer including a low-dimensional perovskite material. According to the solar cell and the photovoltaic module provided by the present disclosure, a photovoltaic module can be manufactured.

Abstract: A tandem photovoltaic device and production method. The tandem photovoltaic device includes: an upper battery cell and a lower battery cell, and a tunnel junction located between the upper battery cell and the battery cell; the lower battery is a crystalline silicon cell; the tunnel junction includes: an upper crystalline silicon layer, a lower crystalline silicon layer and an intermediate layer located between the upper crystalline silicon layer and the lower crystalline silicon layer; the upper crystalline silicon layer, the lower crystalline silicon layer and the intermediate layer are in direct contact, and the doping types of the upper crystalline silicon layer and the lower crystalline silicon layer are opposite; the doping concentration of the upper crystalline silicon layer at the interface with the intermediate layer and the doping concentration of the lower crystalline silicon layer at the interface with the intermediate layer are greater than or equal to 1018 cm?3.

Abstract: A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

Abstract: The laminated A tandem solar cell includes a bottom cell and a top cell located on the bottom cell, wherein the bottom cell includes a first doping portion and a second doping portion, the first doping portion and the second doping portion form at least one PN junction, majority carriers in the first doping portion are a first type of carrier, and majority carriers in the second doping portion are a second type of carrier; the bottom cell is provided with a first electrode hole and a second electrode hole which penetrate the bottom cell, a first electrode is formed in the first electrode hole, and a second electrode is formed in the second electrode hole; the first electrode is in contact with the first doping portion; and the second electrode is in contact with the second doping portion.

Abstract: A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.

Abstract: A method, apparatus and device for detecting a growth state of a crystalline line of a silicon rod, relating to the technical field of monocrystalline silicon, including in a process of constant-diameter growth of the silicon rod, acquiring a sample image of the silicon rod providing a detection area in the sample image, wherein the detection area overlaps with a crystalline-line growth line of the silicon rod generating a grayscale-value curve of the detection area, and according to the grayscale-value curve of the detection area, determining the growth state of the crystalline line of the silicon rod on the crystalline-line growth line. The method alleviates the affection on the detection of crystalline lines by the fluctuation of the diameter of the silicon rod and the unclarity of the features of the crystalline lines, thereby improving the accuracy and the efficiency of the detection on the crystalline lines.

Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: A groove engraving device and a groove engraving method are provided. The groove engraving device includes: a processing chamber for containing a piece to be processed, a cutter for groove engraving on the piece to be processed, a clamping mechanism for clamping the piece to be processed, a driving mechanism for driving the clamping mechanism to rotate, and a temperature controlling device for controlling a temperature inside the processing chamber to be within a preset temperature range. The clamping mechanism and the cutter are disposed inside the processing chamber, and the clamping mechanism is rotatable with respect to the processing chamber. The temperature controlling device is disposed inside the processing chamber. The groove engraving device can improve the processing efficiency and quality of the groove engraving on the piece to be processed.

Abstract: A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm?3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

Abstract: An intermediate series-connecting layer, a laminated photovoltaic device and a fabricating method are provided. The intermediate series-connecting layer is light-transmittable; the intermediate series-connecting layer includes a longitudinal conducting layer; and the longitudinal conducting layer is formed by nano-sized conducting columns that longitudinally grow; or the longitudinal conducting layer includes nano-sized conducting units that are separately distributed, and insulating and separating bodies located between neighboring the nano-sized conducting units, and the insulating and separating bodies transversely insulate the nano-sized conducting units. A large quantity of grain boundaries or interfaces are located between the nano-sized conducting columns, and have a poor transverse conducting performance, the longitudinal conducting layer has a poor transverse conducting capacity, the charge carriers are mainly longitudinally transmitted, and there is substantially no transverse current.

Abstract: A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 1021cm?3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

Abstract: A groove engraving device and a groove engraving method are provided. The groove engraving device includes: a processing chamber for containing a piece to be processed, a cutter for groove engraving on the piece to be processed, a clamping mechanism for clamping the piece to be processed, a driving mechanism for driving the clamping mechanism to rotate, and a temperature controlling device for controlling a temperature inside the processing chamber to be within a preset temperature range. The clamping mechanism and the cutter are disposed inside the processing chamber, and the clamping mechanism is rotatable with respect to the processing chamber. The temperature controlling device is disposed inside the processing chamber. The groove engraving device can improve the processing efficiency and quality of the groove engraving on the piece to be processed.

Abstract: A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.

Abstract: A photovoltaic module includes at least one cell unit, and the at least one cell unit is rectangular; the at least one cell unit includes a plurality of cell-string groups that are electrically connected, each of the plurality of cell-string groups includes a plurality of cell strings connected in parallel, and each of the plurality of cell strings includes a plurality of cell connected in series; each of the plurality of cell-string groups has two electrically conductive ends and two side edges located between the two electrically conductive ends; and at least two neighboring instances of the plurality of cell-string groups are arranged in a predetermined mode, wherein the predetermined mode is as follows: one of the two electrically conductive ends of one of the plurality of cell-string groups and one of side edges of the neighboring cell-string group are located on a same straight line.

Abstract: A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i-th cycle period; correcting the PID initial values of the i-th cycle period, and obtaining PID corrected values of the i-th cycle period; and according to the PID corrected values of the i-th cycle period, controlling a crystal growth diameter of the i-th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.