Abstract: A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below, (R1)3-Si-R2-Si-(R1)3??Chemical Formula 1, (R3)3-Si-R4-Si-(R3)3??Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Provided is a composition for etching a silicon nitride film, which contains inorganic acid, silicon compound, and water, and does not contain fluorine, and which can selectively remove the silicon nitride film, while minimizing damages to the underlying metal film and the etching rate of the silicon oxide film.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: There is provided a cleaner composition for a process of manufacturing a semiconductor and a display. The cleaner composition includes 0.01 to 5.0 wt % of amino acid-based chelating agent, 0.01 to 1.5 wt % of organic acid, 0.01 to 1.0 wt % of inorganic acid, 0.01 to 5.0 wt % of alkali compound, and the balance of deionized water and is based on acidic water with pH levels of 1 to 5. The cleaner composition may enhance metal contaminants removal capability and have a function to remove particles and organic contaminants, and prevent corrosion of copper and reverse adsorption of copper. Thus, cleaner composition may be used for various purposes of etching copper, removing residues, and a cleaner by adjusting an etch rate.

Abstract: Provided is a cleaning composition, including, from about 0.01 weight % to about 10.0 weight % of a chelating agent, from about 0.01 weight to about 3.0 weight % of an organic acid containing a carboxyl group, from about 0.01 weight % to about 2.0 weight % of an inorganic acid, from about 1.0 weight % to about 15.0 weight % of an amine and water in an amount sufficient to bring the total weight of the cleaning composition to 100 weight %.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.