Abstract: The disclosure relates to a display apparatus and a method of controlling the same, the display apparatus including: a display; a first communication interface unit comprising circuitry; a second communication interface unit comprising circuitry; a power supply; and a controller comprising at least one processor, comprising processing circuitry, individually and/or collectively, configured to: control the display to display a first image based on a signal received from a first external apparatus through the first communication interface unit, control a signal received from the first external apparatus to be output to a second external apparatus through the second communication interface unit to display a second image based on the signal, identify third power suppliable to the first external apparatus, based on first power suppliable by the power supply and second power receivable from the second external apparatus through the second communication interface unit, and control the power supply unit to supply the

Abstract: A wireless conferencing system for wirelessly connecting a computerized device with a display device includes at least a data transmitter. The data transmitter includes a transmitter self-powered unit, a data transmission module electrically powered by the transmitter self-powered unit, and a computer interface communicatively lined to the data transmission module, wherein when the computer interface is configured for detachably connecting to the computerized device, the data transmission module is powered and ready for wirelessly transmitting data from the computerized device to the display device without consuming power of the computerized device.

Abstract: A packaging method for a driver kernel module includes: configurating specification file according to the driver kernel module; and packaging the driver kernel module and the specification file into a driver package in a target format. An electronic device and a non-volatile storage medium therein, for performing the above-described method, are also disclosed.

Abstract: Provided is a nonaqueous electrolytic solution containing a nonaqueous organic solvent, a solute, a specific silicon compound (A), a specific borate (B), and a specific imide salt (C), in which WB/WA, which is a ratio of a content WB of the borate (B) based on mass to a content WA of the silicon compound (A) based on mass, is 1.5 or more and 3 or less, and WC/WA, which is a ratio of a content WC of the imide salt (C) based on mass to a content WA of the silicon compound (A) based on mass, is 1 or more and 5 or less, and the nonaqueous electrolytic solution can exhibit an effect of reducing an absolute value of internal resistance at a low temperature and an effect of improving a battery capacity after a cycle test in a well-balanced manner.

Abstract: A sealed battery of the present invention comprises: an electrode assembly having a multilayered structure in which a positive electrode, a negative electrode, and a separator are layered; and a first clip. The positive electrode has a positive-electrode current collection sheet and a positive-electrode active material layer; and the negative electrode has a negative-electrode current collection sheet and a negative-electrode active material layer. The electrode assembly has the following sections: a positive-electrode extended section which is a layered portion of the positive-electrode current collection sheet and extends from the multilayered structure; and a negative-electrode extended section which is a layered portion of the negative-electrode current collection sheet and extends from the multilayered structure.

Abstract: A busbar module includes: a busbar including an upper plate and a lower plate overlapping with the upper plate; an electrode lead positioned between the upper plate and the lower plate; and a connecting part disposed between the upper plate and the electrode lead to electrically connect the upper plate and the electrode lead, wherein a through hole is formed in the lower plate, and the connecting part is disposed at a position corresponding to the through hole.

Abstract: A power distribution component includes a wavelength converter, a connecting portion, a first power distribution portion and a second power distribution portion. The wavelength converter has an input end and a connection end. The connecting portion includes a first connecting end and a second connecting end, and the first connecting end is connected to the connection end. The first power distribution portion includes a first output port and a first end, and the first end is connected to the second connecting end. The second power distribution portion includes a second output port and a second end, and the second end is connected to the second connecting end. The first power distribution portion and the second power distribution portion are symmetrically disposed on opposite sides of the connecting portion by regarding the connecting portion as a mirror axis. Additionally, a wireless transceiver including a power distribution component is also provided.

Abstract: The disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A transmission line structure of a wireless communication system is provided. The transmission line includes a ground area, a signal line, and a support. A first surface of the signal line is disposed to be spaced apart from the ground area via an air layer therebetween, a second surface of the signal line located opposite to the first surface may be coupled to the support, and the support may be coupled to the ground area.

Abstract: The present invention relates to an antenna unit, and more particularly, to an antenna unit comprising a metal plate and an antenna filter unit. The present disclosure provides an antenna unit including a metal plate into which a stand-off head is inserted. The present disclosure provides an antenna unit including a metal plate having formed therein a groove for covering a circuit of a calibration network. The present disclosure provides an antenna unit including a filter unit having formed therein a groove for covering a circuit of a calibration network. The present disclosure provides an antenna unit comprising plastic rivets for coupling an antenna, a metal plate, and a calibration network. The present disclosure provides an antenna unit including a metal plate having a transmission line formed thereon.

Abstract: An electric energy transmission joint and a preparation method therefor. The electric energy transmission joint includes an electric energy transmission copper part, an electric energy transmission aluminum part, and an aluminum wire. The electric energy transmission copper part includes a fixer for connection with an electric consumption device, and a connector for connection with the electric energy transmission aluminum part. A first through hole is provided inside the electric energy transmission aluminum part, and a second through hole is provided inside the connector. An aluminum conductive core exposed by stripping an insulation layer from a front end of the aluminum wire is inserted into a cavity formed by the connection of the first through hole and the second through hole.

Abstract: The present disclosure pertains to a board connector comprising a plurality of RF contacts; an insulating part; a plurality of transmission contacts coupled to the insulating part between a first RF contact and a second RF contact, such that the RF contacts are spaced from each other in a first axial direction; and a ground housing to which the insulating part is coupled, the ground housing comprising a ground inner wall, a ground outer wall, and a ground connection wall coupled to each of the ground inner and outer walls, wherein the ground inner and outer walls are double-shielding walls surrounding the side of an inner space, the RF contacts are located in the inner space surrounded by the double-shielding walls, and each of the ground inner and outer walls contacts the ground housing of a counter connector inserted into the inner space.

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.

Abstract: A data transmission method, a communications device, and a communications system are provided for wireless communications. A terminal device receives a first system information broadcast by a radio access network device. The first system information includes a non-public network (NPN), identification information list and a first association information. The NPN identification information list includes at least one NPN identification information and determines a second system information is valid when first NPN identification information in the NPN identification information list is identical to second NPN identification information stored in the terminal device, and the first association information is identical to a second association information stored in the terminal device. The second system information can include the second NPN identification information and the second association information.

Abstract: A method of a base station in a wireless communication system is provided. The method includes: configuring a conditional handover (CHO) condition for a User Equipment (UE); and transmitting a message including the configured CHO condition to the UE, wherein the CHO condition comprises a measurement object and a report configuration field.

Abstract: A method of forming a semiconductor device includes forming a fin of alternating layers of semiconductor nanostructures and sacrificial layers, laterally etching sidewall portions of the sacrificial layers, and depositing additional semiconductor material over the sidewalls of the semiconductor nanostructures and sacrificial layers. Following deposition of a dielectric material over the additional semiconductor material and additional etching, the remaining portions of the semiconductor structures and additional semiconductor material collectively form a hammer shape at each opposing side of the fin. Epitaxial source/drain regions formed on the opposing sides of the fin will contact the heads of the hammer shapes.

Abstract: An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely covering a surface of the SRB layer, wherein the SRB layer includes a silicon germanium (SiGe) epitaxial layer including germanium (Ge) at a first concentration of about 2.5 at % to about 18 at %, and the multi-stack has a superlattice structure in which a plurality of silicon (Si) layers and a plurality of SiGe layers are alternately provided.

Abstract: A method of making a Fin Field-effect transistor includes: providing a substrate and a plurality of fin structures on a surface of the substrate; forming a shallow trench isolation structure between the plurality of fin structures; forming a stress layer on a side of the shallow trench isolation structure away from the substrate; heat treating the stress layer and the plurality of fin structures; and removing the stress layer. The fin structures are spaced apart from each other. The stress layer covers a part of the fin structures away from the substrate.

Abstract: A semiconductor device includes a first cobalt-containing plug disposed over a substrate, a second cobalt-containing plug disposed over the first cobalt-containing plug, a first barrier layer over sidewalls of the second cobalt-containing plug, a second barrier layer over sidewalls of the first barrier layer, and a dielectric layer surrounding the second barrier layer. The first barrier layer contains a metal element. The first and second barrier layers include different material compositions.

Abstract: A semiconductor device structure includes a first S/D feature over a first device region of a substrate, a plurality of first semiconductor layers over the first device region of the substrate, and each first semiconductor layer is in contact with the first source/drain feature, a first gate electrode layer surrounding a portion of each first semiconductor layer, and a first dielectric spacer contacting the first S/D feature, the first dielectric spacer disposed between and in contact with two first semiconductor layers of the plurality of the first semiconductor layers. The substrate comprises a first dopant region underneath the first S/D feature and a second dopant region underneath first gate electrode layer and radial outwardly of the first dopant region, the first dopant region comprising first dopants having a first conductivity type and a first dopant concentration and the second dopant region comprising the first dopants having a second dopant concentration less than the first dopant concentration.

Abstract: A semiconductor device includes an active region, a plurality of channel layers disposed to be spaced apart from each other in a vertical direction on the active region, a gate structure extending in a second direction to intersect the active region and the plurality of channel layers and surrounding the plurality of channel layers, a source/drain region disposed on the active region on at least one side of the gate structure and contacting the plurality of channel layers, and a contact plug connected to the source/drain region. The source/drain region includes a first epitaxial layer disposed on the active region and extending to contact the plurality of channel layers, second epitaxial layers disposed on the first epitaxial layer, each including impurities in a first concentration, and doping layers stacked alternately with the second epitaxial layers, each including the impurities in a second concentration higher than the first concentration.