Patents Assigned to LTD.
  • Patent number: 12388464
    Abstract: A method for compressing and encrypting haptic effect data, a system, and related devices are provided. Compared with related technologies, in the method for compressing and encrypting the haptic effect data of the disclosure, the encryption and compression manners are respectively adopted for processing from the data obtaining stage to the playing stage, so that the storage space of the haptic effect data is saved when the data is stored, and the original data can be restored when the data is played, thus ensuring the playing effect. In addition, the encryption algorithm is used for data encryption during storage, which can ensure the security of the original haptic effect data during storage.
    Type: Grant
    Filed: June 27, 2023
    Date of Patent: August 12, 2025
    Assignee: AAC Acoustic Technologies (Shanghai) Co., Ltd.
    Inventor: Zheng Xiang
  • Patent number: 12388492
    Abstract: A distributed power system including multiple DC power sources and multiple power modules. The power modules include inputs coupled respectively to the DC power sources and outputs coupled in series to form a serial string. An inverter is coupled to the serial string. The inverter converts power input from the serial string to output power. A signaling mechanism between the inverter and the power module is adapted for controlling operation of the power modules. Also, for a protection method in the distributed power system, when the inverter stops production of the output power, each of the power modules is shut down and thereby the power input to the inverter is ceased.
    Type: Grant
    Filed: December 13, 2023
    Date of Patent: August 12, 2025
    Assignee: Solaredge Technologies Ltd.
    Inventors: Meir Adest, Guy Sella, Lior Handelsman, Yoav Galin, Amir Fishelov, Meir Gazit, Yaron Binder
  • Patent number: 12389256
    Abstract: Sparsity assisted channel state information (CSI) reporting or two-step CSI reporting is enabled or disabled for a user equipment. The configuration enabling/disabling sparsity assisted truncation for CSI reporting or two-step CSI reporting includes a domain for transformation of CSI for the sparsity assisted CSI reporting, and a time window for correlated channel. When the configuration enables sparsity assisted truncation for CSI reporting, a fixed number of non-zero coefficients and one or more threshold values for delay/angle or doppler for truncation are configured. When sparsity assisted truncation for CSI reporting is enabled, received the CSI reference signals are measured based on the configuration and a CSI report is transmitted indicating a specific range for which truncation occurred. When two-step CSI reporting is enabled, CSI compression corresponding to the at least one configuration and the time window is performed and CSI feedback is transmitted along with a flag.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: August 12, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pranav Madadi, Jeongho Jeon, Joonyoung Cho
  • Patent number: 12389261
    Abstract: Methods and apparatuses for interference management in a wireless communication system. A method for operating a user equipment (UE) includes receiving configuration information about I. I is interference information for interfering Nint remote radio heads (RRHs), where Nint?N?1. The configuration information indicates a number of RRHs, N>1. The method further includes determining, based on the interference information I, a downlink (DL) spatial filter using P antenna ports, where P>1, and receiving DL data using the determined DL spatial filter.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: August 12, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gilwon Lee, Md. Saifur Rahman, Eko Onggosanusi
  • Patent number: 12389269
    Abstract: A method and an apparatus for clustering Internet protocol (IP) packets in a wireless network are provided. The method includes receiving, by a network device in the wireless network, a plurality of IP packets from an upper layer of a user equipment (UE) in the wireless network or vice versa, initiating a timer on receiving the plurality of IP packets from the upper layer, forming a cluster of IP packets having a predetermined maximum size while the timer is running, stopping the timer once the formation of the cluster is completed, and transmitting the cluster of IP packets to a lower layer of the UE, where the lower layer treats the cluster of IP packets as a single payload to minimize the IP packets handled at the lower layer of the UE.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: August 12, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mahantesh Kothiwale, Aneesh Narendra Deshmukh, Nayan Ostwal, Anshuman Nigam, Nitin Anand
  • Patent number: 12388629
    Abstract: Disclosed are methods and systems for calculating an arithmetic function expressed as addition of groups of multiplications of a set of private input secrets held by dealer nodes. Random exponent blinding factors are generated, and each computing node receives polynomial shares from each exponent blinding factor and a polynomial share and a public generator from the multiplicative group of integers modulo a prime number. The indexing integers are partitioned among the computing nodes, and each computing node computes a set of shares from the polynomial shares then sent to the dealer nodes which reconstruct the corresponding dealer blinding factor, and use it to create and send a particle to the computing nodes. The computing nodes then calculate from the received particles a result share of a polynomial which, when combined by a result node, allow the evaluation of complete polynomial which includes the result of the arithmetic function.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: August 12, 2025
    Assignee: SEDICII INNOVATIONS LTD.
    Inventor: Miguel De Vega Rodrigo
  • Patent number: 12388678
    Abstract: A VXLAN access authentication method includes: An authentication point device receives a VXLAN authentication packet, where the VXLAN authentication packet is a VXLAN packet. The VXLAN authentication packet includes a VXLAN header and an authentication request sent by a terminal, the VXLAN header includes a first VNI, and the authentication request includes an authentication credential. The authentication point device obtains permission of the terminal or a second VNI based on the authentication credential. The permission of the terminal corresponds to the second VNI. The authentication point device sends the permission of the terminal or the second VNI to a control point device, where the control point device is a device that encapsulates the authentication request into the VXLAN authentication packet. In this application, VXLAN access authentication is performed on an overlay network, so that configuration complexity can be reduced when a VXLAN access authentication mode is modified or created.
    Type: Grant
    Filed: October 26, 2022
    Date of Patent: August 12, 2025
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventor: Zhengquan Huang
  • Patent number: 12388699
    Abstract: Methods and apparatus for frequency offset estimation are disclosed. In an exemplary embodiment, a method includes determining a demodulation reference signal (DMRS) frequency offset estimate from DMRS symbols in a received signal, and determining a cyclic prefix (CP) frequency offset estimate from cyclic prefix values in the received signal. The method also includes combining the DMRS and CP frequency offset estimates to determine a final frequency offset estimate. In an exemplary embodiment, an apparatus includes a DMRS frequency offset estimator that determines a DMRS frequency offset estimate based on DMRS symbols received in an uplink transmission, and a cyclic prefix (CP) frequency offset estimator that determines a CP frequency offset estimate based on cyclic prefix values in the uplink transmission. The apparatus also includes an offset combiner that combines the DMRS frequency offset estimate with the CP frequency offset estimate to generate a final frequency offset estimate.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: August 12, 2025
    Assignee: MARVELL ASIA PTE, LTD.
    Inventors: Hyun Soo Cheon, Hong Jik Kim, Tejas Maheshbhai Bhatt
  • Patent number: 12388893
    Abstract: This application provides a P2P-based data distribution method, apparatus, and system. The method is applied to a data distribution system, where the data distribution system includes at least three devices and a server. The method includes: Any one of the at least three devices sends request information to the server, and receives response information sent by the server. The any device determines a first target device set from adjacent devices based on the response information, and sends first data to a device in the first target device set, where the first data carries identification information of the any device, and the identification information is used to indicate the device in the first target device set to distribute the first data to a device in a second target device set when determining the first data as to-be-distributed data.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: August 12, 2025
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventor: Gangjie He
  • Patent number: 12389650
    Abstract: A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: August 12, 2025
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takayuki Ikeda, Hitoshi Kunitake, Hajime Kimura, Haruyuki Baba
  • Patent number: 12389660
    Abstract: Provided is a semiconductor device including backside contact structure with a silicide layer formed in an FEOL process, and a method of manufacturing the same. The method includes: forming a channel structure on a substrate; forming a placeholder structure in the substrate; forming a silicide layer on the placeholder structure; forming a source/drain region on the silicide layer based on the channel structure; forming a gate structure on the channel structure; and forming a backside contact structure on a bottom surface of the placeholder structure.
    Type: Grant
    Filed: August 19, 2024
    Date of Patent: August 12, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wonkeun Chung, Byounghoon Kim, Jongjin Lee, Kang-ill Seo
  • Patent number: 12389661
    Abstract: A method for manufacturing a semiconductor device includes forming a metal-including layer over a semiconductor substrate; forming a hydrophobic polymer layer over the metal-including layer; and forming an amphiphilic polymer layer between the metal-including layer and the hydrophobic polymer layer so as to enhance a bonding force therebetween.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: August 12, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Chen Lee, Ren-Kai Chen, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo-Bin Huang
  • Patent number: 12389674
    Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a first plurality of stacked semiconductor layers in a p-type transistor region and a second plurality of stacked semiconductor layers in a n-type transistor region. A gate dielectric layer wraps around each of the first and second plurality of stacked semiconductor layers. A first metal gate in the p-type transistor region has a work function metal layer and a first fill metal layer, where the work function metal layer wraps around and is in direct contact with the gate dielectric layer and the first fill metal layer is in direct contact with the work function metal layer. A second metal gate in the n-type transistor region has a second fill metal layer that is in direct contact with the gate dielectric layer, where the second fill metal layer has a work function about equal to or lower than 4.3 eV.
    Type: Grant
    Filed: March 4, 2024
    Date of Patent: August 12, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Mrunal A. Khaderbad, Ziwei Fang, Keng-Chu Lin, Hsueh Wen Tsau
  • Patent number: 12389682
    Abstract: A display panel and a method for fabricating the same are disclosed. The display panel includes a base substrate, a micro-light emitting device layer and a thin film transistor array layer. The micro-light emitting device layer is disposed on one side of the base substrate, a light output side faces to the base substrate, and the thin film transistor array layer is formed on the side of the micro-light emitting device layer facing away from the light output side. LED chips do not need to be bound and connected to the thin film transistor array layer through a conductive adhesive bonding process or a metal bonding process during mass transfer, so that the stability and yield are improved.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: August 12, 2025
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Shijuan Yi
  • Patent number: 12389694
    Abstract: Disclosed herein, in some embodiments, is a memory device. The memory device includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. An upper surface of the bottom electrode faces away from the substrate. A bottom surface of the top electrode faces the substrate. A data storage layer is arranged between the bottom electrode and the top electrode. At least a portion of the bottom surface of the top electrode does not overlap with any portion of the top surface of the bottom electrode along a first direction parallel to the bottom surface of the top electrode. Furthermore, at least a portion of the top surface of the bottom electrode does not overlap with any portion of the bottom surface of the top electrode along the first direction.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: August 12, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chao-Ching Cheng, Jung-Piao Chiu, Tzu-Chiang Chen, Yu-Sheng Chen
  • Patent number: 12389710
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type. An isolation structure is disposed within the semiconductor substrate. The isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface. A doped liner is disposed between the isolation structure and the second doped region. The doped liner comprises the second dopant.
    Type: Grant
    Filed: June 15, 2023
    Date of Patent: August 12, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Yun Yang, Chun-Yuan Chen, Ching I Li
  • Patent number: 12389721
    Abstract: A luminescent nanostructure, a production method for making the luminescent nanostructure, and an electronic device including the luminescent nanostructure. The luminescent nanostructure includes a semiconductor nanocrystal including a Group 13 metal nitride. The luminescent nanostructure has an aspect ratio of greater than or equal to about 1, and an organic compound having an M-O moiety, wherein M is Ti, Al, Zr, Sn, or Si that is bound to at least a portion of the surface of the luminescent nanostructure.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: August 12, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Soo Jee, Shang Hyeun Park, Shin Ae Jun
  • Patent number: 12389032
    Abstract: A method and device for intra prediction are provided. The method includes: when determining that a current level obtained by partitioning an input point cloud is lower than a target level, obtaining occupation information of a first number of neighbouring nodes of a current node; extracting occupation information of a second number of neighbouring nodes from the occupation information of the first number of neighbouring nodes, the first number being greater than the second number, and the second number of neighbouring nodes being in an association relationship with a child node of the current node, and performing intra prediction on occupation information of the child node of the current node based on the occupation information of the second number of neighbouring nodes to obtain a first prediction result.
    Type: Grant
    Filed: January 24, 2024
    Date of Patent: August 12, 2025
    Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventors: Shuai Wan, Zhecheng Wang, Fuzheng Yang, Yanzhuo Ma, Junyan Huo
  • Patent number: 12389097
    Abstract: A camera module includes a circuit board on which an image sensor is disposed, a lens unit disposed in front of a sensor surface of the image sensor, a housing accommodating the lens unit and the image sensor, disposed on the circuit board and a gyro sensor sensing the motion. The circuit board includes a first circuit board on which the image sensor is disposed, and a second circuit board on which the gyro sensor is disposed. The first circuit board may be disposed extending in a first axis direction, and the second circuit board may be disposed extending in a direction parallel to the optical axis direction while perpendicular to the first axis. The central axis of the gyro sensor may be parallel to the first axis direction but perpendicular to the optical axis direction.
    Type: Grant
    Filed: September 12, 2023
    Date of Patent: August 12, 2025
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Tae Kyung Kim, Jung Hwan Bang, Young Bae Jang
  • Patent number: 12389117
    Abstract: Provided are an image photographing method, a device, a storage medium, and a program product. The method includes: displaying a first preview interface of a camera application, where the first preview interface includes a first preview image, the first preview image is obtained after processing a first image collected by a camera, the first preview image corresponds to a first zoom ratio, and the first image corresponds to a first output mode of the camera; receiving a first operation performed by a user; and displaying a second preview interface of the camera application in response to the first operation, where the second preview interface includes a second preview image, the second preview image is obtained after processing a second image collected by the camera, the second preview image corresponds to a second zoom ratio, and the second image corresponds to a second output mode of the camera.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: August 12, 2025
    Assignee: Honor Device Co., Ltd.
    Inventors: Shengqing Lu, Yu Wang, Zhiqi Li, Congchao Zhu