Abstract: An embodiment provides a high electron mobility transistor (HEMT), including: a first drain terminal; a gate terminal; a second drain terminal; a channel layer, a portion of which forms a first device together with the first drain terminal and the gate terminal, and another portion of which forms a second device together with the second drain terminal and the gate terminal; and a first barrier layer forming a first two-dimensional electron gas (2DEG) region at an interface with the channel layer within the first device, and a second barrier layer forming a second 2DEG region at the interface with the channel layer within the second device, the first barrier layer and the second barrier layer including a barrier layer with different material properties.