Abstract: A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm?3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels.