Abstract: The invention relates to a method for fabricating a group 13 nitride semiconductor substrate (5) comprising the following steps of: a) deposition of at least one monocrystalline layer (5b) by epitaxial growth (10) on a starting substrate, said monocrystalline laser having an upper face having structural defects that do not pass all the way through (6); b) deposition, by epitaxial growth (30, 35), of at least one continuous polycrystalline layer (5c); c) separation (40) of the starting substrate (1); d) rectification (50) by removing at least one layer thickness corresponding to the thickness of the one or more deposited polycrystalline lasers (5c), the one or more polycrystalline layers (5c) thus being removed with the exception of the zones of the subjacent monocrystalline layer (5b) corresponding to the structural defects that do not pass all the way through (6) that said one or more polycrystalline layers (5c) fill.

Abstract: The invention relates to a method for production of wafers of nitrides of element (13) (5a, 5b, 5c, 5d) from a self-supported crystal of nitride of element (13), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal (10) having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (13), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of: using a mask comprising a plurality of apertures each defining an active area pattern on the initial substrate, growing the layer of nitride, receiving a theoretical pattern pitch corresponding to a desired distance between two adjacent active area patterns on the front face of the layer of nitride, calculating at least one mask pitch different from the theoretical pattern pitch for compensating shifts in the active area patterns, the mask pitch corresponding to a distance between two adjacent apertures of the protective mask.

Abstract: The invention relates to a method for production of wafers of nitrides of element (13) (5a, 5b, 5c, 5d) from a self-supported crystal of nitride of element (13), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal (10) having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (13), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: The invention concerns a reactor for chemical vapour deposition from first and second precursor gases, the reactor comprising: —a chamber including top and bottom walls and a side wall linking the top and bottom walls, —a support intended for receiving at least one substrate, mounted inside the chamber, and —at least one system for injecting precursor gases, the system comprising an injection head including at least one nozzle for supplying the first precursor gas (41) in a main direction of axis A-A?, the at least one nozzle including: a precursor gas supply conduit (321), and an outlet member (322) generating a substantially annular 43 vortex flow (44) around axis A-A?.

Abstract: The invention relates to a method for manufacturing a semi-conducting material including a layer (50) of nitride of a group 13 element comprising active areas (52) for manufacturing electronic components, and inactive areas (51), the active and inactive areas extending on a front face (53) of the layer of nitride of a group 13 element, the concentration of crystal defects in the active areas being less than the concentration of defects in the inactive areas, the method comprising steps consisting of: using a mask for forming on an initial substrate (10): first regions for growing active areas and second regions (11) for growing inactive areas, the mask comprising a plurality of apertures each defining an active area pattern on the initial substrate, and growing (700) the layer of nitride of group 13 element comprising the active and inactive areas on the first and second regions, remarkable in that the method further comprises the following steps: receiving a theoretical pattern pitch, the theoretical

Abstract: A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially compentent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.

Abstract: The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at least a step of epitaxial lateral overgrowth and in that it comprises a step which consists in separating part of the GaN layer from its substrate by embrittlement through direct ion implantation in the GaN substrate. The invention also concerns the films obtainable by said method as well as the optoelectronic and electronic components provided with said gallium nitride films.

Abstract: The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. The invention is characterized in that the gallium nitride deposition comprises at least one step of vapour-phase epitaxial lateral overgrowth, in that at least one of said epitaxial lateral overgrowth steps is preceded by etching openings either in a dielectric mask previously deposited, or directly into the substrate, and in that it consists in introducing a dissymmetry in the environment of dislocations during one of the epitaxial lateral overgrowth steps so as to produce a maximum number of curves in the dislocations, the curved dislocations not emerging at the surface of the resulting gallium nitride layer. The invention also concerns the optoelectronic and electronic components produced from said gallium nitride films.

Abstract: Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step, growth conditions are changed to increase the lateral growth rate and produce a flat (0001) surface. At this stage the density of dislocations on the surface is <5×107 cm 2. Dislocations are primarily located at the coalescence region between two laterally grown facets pinching off together. To further decrease the dislocation density a second masking step is achieved, with the openings exactly located above the first ones. Threading dislocations (TDs) of the coalescence region do not propagate in the top layer. Therefore the density of dislocations is lowered below <1×107 cm lover the entire surface.

Abstract: The present invention relates to a process for producing an epitaxial layer of gallium nitride (GaN) as well as to the epitaxial layers of gallium nitride (GaN) which can be obtained by said process. Such a process makes it possible to obtain gallium nitride layers of excellent quality by (i) forming on a surface of a substrate, a film of a silicon nitride of between 5 to 20 monolayers, functioning as a micro-mask, (ii) depositing a continuous gallium nitride layer on the silicon nitride film at a temperature ranging from 400 to 600° C., (iii) after depositing the gallium nitride layer, annealing the gallium nitride layer at a temperature ranging from 950 to 1120° C. and (iv) performing an epitaxial regrowth with gallium nitride at the end of a spontaneous in situ formation of islands of gallium nitride.

Abstract: A process for producing an epitaxial layer of gallium nitride (GaN). A film of a dielectric whose thickness is about one monolayer is formed on a surface of a substrate. A continuous gallium nitride layer is then deposited on the dielectric film at a temperature sufficiently low to suppress island formation of the gallium nitride. The deposited gallium nitride layer is annealed at a temperature sufficiently high to promote island formation of the gallium nitride. An epitaxial regrowth with gallium nitride at the end of a spontaneous in situ formation of islands of gallium nitride then takes place. This method makes it possible to avoid having to use ex situ etching of masks by photolitographiy or chemical ethching techniques.