Abstract: A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.

Abstract: The blank mask according to one embodiment of the present disclosure comprises a transparent substrate and a multilayer light shielding film disposed on the transparent substrate. The multilayer light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The multilayer light shielding film comprises a first light shielding film and a second light shielding film disposed on the first light shielding film. The multilayer light shielding film comprises total nine parts that are formed by trisection in a width direction and a length direction of an upper surface of the multilayer light shielding film. Each part of the multilayer light shielding film comprises a measuring range disposed in a side thereof.

Abstract: The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.