Abstract: Batch thin film capacitors and their methods of manufacture using semiconductor manufacturing techniques. A mask, photo mask or shadow mask, having a pattern is used to form a matrix of rows and columns of thin film capacitors in a wafer. Capacitor terminals are formed in a batch process by separation at column saw areas, depositing a conductive layer and vertically etching horizontal layers of the conductive layer. Capacitance of an individual batch processed thin film capacitor is increased by stacking wafers together prior to separation at the column saw areas and forming capacitor terminals thereafter to couple parallel thin film capacitors together.

Abstract: Capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates.

Abstract: The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.

Abstract: Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.