Abstract: A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. The aperture-defining layer is constructed by implanting or diffusing elements into one or more of the mirror layers prior to depositing the remaining mirror layers on top of the aperture-defining layer.

Abstract: Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer.