Abstract: A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

Abstract: A device for measuring the performance of an optical detector includes a cryostat, a holder capable of receiving the detector, secured to the inside of the cryostat, and means for measuring the performance of the detector. It also includes a screen arranged around the holder capable of limiting the radiation likely to reach the holder in a wavelength range of the detector, and a single-mode optical fiber in the wavelength range of the detector, inserted in an opening of the cryostat. The device further comprises at least one luminous flux generation module that incorporates a fibered source capable of generating the luminous flux in the optical fiber.

Abstract: A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

Abstract: A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.

Abstract: The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530), wherein: the pitch of the detection cells in at least one direction in the plane of pixel array is between 5 and 11 ?m; a pixel fill factor FF of the absorption layer (530) of the one or more detection cells in each pixel is in a range 0.10 to 0.50; and a sheet resistance Rs of the absorption layer (530) of each detection cell is between 16 and 189 ohm/sq.

Abstract: A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

Abstract: An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.

Abstract: The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530) forming a quarter-wave cavity (533) having a height (h) of between 1.5 and 5 ?m, wherein the pitch of the detection cells in at least one axis in a plane of the pixel array is in the range 2.4 h to 3.6 h.

Abstract: A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tr for a time ?tr, exhibits an electrical resistivity ?a|r at room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature Tr for the time ?tr.

Abstract: An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.

Abstract: An electromagnetic radiation detection system includes a detection circuit detecting an electromagnetic radiation and supplying a representative electrical signal. A cold table supports the detection circuit. A thermally insulating support supports the cold table. It includes an enclosure defining a closed volume and provided with a bottom, a top and a side wall connecting the bottom and the top. The thermally insulating support mechanically connects the cold table with the bottom of the enclosure. A cooler is mechanically connected to the enclosure and configured to cool the detection circuit. The cooler is mechanically fastened onto the side wall of the enclosure and thermally connected to the detection circuit by means of a thermal connector connecting the cooler and the cold table and the cold shield.

Abstract: A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

Abstract: A generator of phases of a detector integrates at least one elementary machine for interpreting a microcode stored in a register. Each elementary machine includes at least one control input having a logic level change detector. Each elementary machine also includes at least one phase output having a controlled switch, enabling to define the logic level of the phase output, and a controlled inverter enabling to toggle the logic level of the phase output. Further, each elementary machine includes at least one clock signal associated with a counter, and a unit for loading the instructions and the arguments stored in the register, the instructions being coded over 3 bits.

Abstract: The present disclosure relates to a method of removing, by an imaging processing device, remanence artifacts from an image (fn) of a sequence of images captured by an infrared imaging device, the method comprising: inpainting a zone of remanence in the image (fn) to generate an inpainted image; generating a remanence measure for at least some pixels in the image (fn) based on the inpainted image; and removing remanence artifacts from at least some pixels of the image (fn) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measures of a plurality of the images in the sequence.

Abstract: The present disclosure relates to a method of removing, by an imaging processing device, remanence artifacts from an image (fn) of a sequence of images captured by an infrared imaging device, the method comprising: generating a remanence measure for at least some pixels in the image (fn) based on a difference between the pixels values of the image (fn) and the pixel values a previous image (fn?1) of the sequence; and removing remanence artifacts from at least some pixels of the image (fn) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measure and on one or more previous remanence estimations of the at least some pixels and on a model of the exponential decay of the remanence.

Abstract: A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 ?m and 50 ?m so as to absorb the mechanical stresses induced by the first stack.

Abstract: A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.

Abstract: An infrared camera includes a housing containing a pixel array. The pixel array includes: image pixels forming an image sensor arranged to receive infrared light from an image scene; and a plurality of parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing.

Abstract: An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

Abstract: A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.