Abstract: A dual-chip package structure is configured to electrically connect a first CS bonding pad of a non-volatile memory chip to a CS pin of a lead frame and electrically connect a second CS bonding pad of a volatile memory chip to a heat-dissipating exposed pad, so as to provide a non-volatile memory chip select signal for the non-volatile memory chip through the CS pin, and provide a volatile memory chip select signal for the volatile memory chip through the heat-dissipating exposed pad. This achieves a low pin count dual-chip package structure, which can effectively reduce the cost and avoid conflict between the two chips.

Abstract: A read/write control device of resistive type memory includes a first logic unit and a second logic unit. In a bit line driving circuit, the first logic unit is connected to a gate of a first transistor set for outputting a bit line signal, wherein the first transistor set includes one PMOS and one NMOS serially connected to each other. The first logic unit has a pair of input terminals respectively for receiving a column selection signal and receiving a control signal that decides if data “0” is to be written. In a source line driving circuit, the second logic unit is connected to a gate of a second transistor set for outputting a source line signal, wherein the second transistor set includes one PMOS and one NMOS serially connected to each other. The second logic unit has a pair of input terminals respectively for receiving a column selection signal and receiving a control signal that decides if data “1” is to be written.

Abstract: A control pad is split into two sections for output one of three signals selected from the group consisted of 00, 01, and 11 on an integrated circuit. Each section is internally connected to different voltage sources, say Vdd which represents logical “1”, or Vss which represents logical “0”, so that a default output is 1,0. When the split control pad is bonded with outside Vdd or Vss, both sections output “1,1” or “0,0” respectively. One of three possible logic word combinations can be selected to use for an IC.

Abstract: Two memory areas on a wafer are coupled through pass transistors to double the memory capacity of each area and can be sawed to yield two memory chips each with single memory area. A pair of pass transistors are used to couple each dedicated functional pad in both memory areas, when the pass transistors are turned on. The connection between the pass transistor pair can be sawed through to yield single capacity memory dice. The memory capacity can be further increased by coupling more memory areas together with pass transistors.