Abstract: The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both cases that said multiple numbers of filters are connected in parallel or in series, said extracted etching solution being supplied to a filter with a filter element of a high silicon removal rate of silicon compounds with already deposited silicon compounds, thus maintaining a high silicon removal rate of silicon compounds.

Abstract: Disclosed is equipment for measuring a silicon concentration in a phosphoric acid solution under use as an etching solution during operation of a semiconductor substrate processing system. The equipment is provided with at least a reaction tank and a concentration-measuring tank. The reaction tank includes a reaction unit for adding hydrofluoric acid to a predetermined constant amount of the phosphoric acid solution drawn out of the semiconductor substrate processing system to form a silicon fluoride compound and then causing the silicon fluoride compound to evaporate. The concentration-measuring tank comprises a hydrolysis unit for bubbling the silicon fluoride compound, which has evaporated from the reaction tank, through deionized water to hydrolyze the silicon fluoride compound and a measurement unit for determining a change rate of silicon concentration in the deionized water subsequent to the bubbling.

Abstract: A substrate treatment apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety. The nozzle unit is constructed in a form of a bar such that as viewed in plan, the liquid ejected from the nozzle unit reaches the substrate with an area range having a length not smaller than a diameter of the substrate and a width smaller than the diameter of the substrate.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A wet treatment method useful in one of a chemical processing and a rinsing step performed upon fabrication of semiconductor devices. A substrate is treated with a desired liquid while revolving the substrate around an axis of rotation outside the substrate such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying the liquid at a flow rate at least equal to a discharge rate of the liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force. The substrate surface is evenly treated with the liquid while avoiding flows of the liquid running against each other or a flow of the liquid stagnating on the surface of the substrate.

Abstract: A regeneration process is disclosed for an etching solution composed of a phosphoric acid solution and used in etching silicon nitride films in an etch bath. As a result of the etching, the etching solution contains a silicon compound. According to the regeneration process, the etching solution with a silicon compound contained therein is taken out of the etch bath. Water is then added to the taken-out etching solution to lower a concentration of phosphoric acid in the etching solution to 80 to 50 wt. %. By the lowing of the concentration of phosphoric acid, the silicon compound is caused to precipitate. The thus-precipitated silicon compound is removed from the etching solution. An etching process making use of the regeneration process and an etching system suitable for use in practicing the regeneration process and etching process are also disclosed.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.

Abstract: Disclosed is an apparatus for preparing and supplying a slurry to a chemical mechanical polishing machine. The slurry contains liquid components at a predetermined mixing ratio. The apparatus includes draw ports for separately drawing therethrough the liquid components, and a discharge port for supplying the slurry to the machine. Feed pumps are arranged on feed lines for the liquid components, respectively, said feed lines extending from the individual draw ports to the discharge port, such that the feed pumps can draw the corresponding liquid components in specific amounts to give the mixing ratio and can deliver the thus-drawn liquid components toward the discharge port, respectively. Dampers and pressurization valves are arranged in combinations on the respective feed lines on delivery sides of the feed pumps. Flowmeters are arranged on downstream sides of the corresponding combinations of the dampers and pressurization valves.

Abstract: The present invention provides a drying method of a substrate surface and a supporting fixture of substrate used in such a method, which, in the drying treatment applied after a chemical and/or water dipping treatment of a semiconductor wafer or a liquid crystal substrate, permits improvement of substrate product yield and is excellent in economic merits, particularly without causing defective drying of the substrate surface near the carrier holding section.

Abstract: A slurry mixing feeder for feeding a slurry to a chemical mechanical polishing machine is disclosed. The slurry contains liquids at a desired mixing ratio. The liquids includes at least a dispersion of fine abrasive particles and a solution of an additive. The slurry mixing feeder comprises: suction ports for sucking the liquids, respectively, a number of said suction ports corresponding to that of the liquids; a discharge port for feeding the slurry to the chemical mechanical polishing machine; feed pumps arranged in feed lines for the respective liquids, said feed lines extending from the individual suction ports to the discharge port, for sucking the individual liquids in specific amounts to give the mixing ratio and delivering the thus-sucked liquids toward the discharge port; and dampers and pressure-regulated restrictors arranged in combination in the feed lines on delivery sides of the feed pumps, respectively. A slurry mixing and feeding method is also disclosed.

Abstract: A substrate cleaning apparatus comprises an outer shell constructed such that the outer shell is selectively openable or hermetically closable to form a sealed space, an inner shell enclosed within the outer shell and having a holding member for holding a substrate, and a dispenser unit for feeding at least one of gas and liquid into the inner shell. Within the sealed space formed by the outer shell, a highly gas-tight space is formed by the inner shell to permit cleaning of the substrate within the highly gas-tight space. Also disclosed are a dispenser, a substrate holding mechanism and a substrate cleaning chamber, which are suitable for use with the substrate cleaning apparatus, and substrate cleaning processes making use of these dispenser, substrate holding mechanism and substrate cleaning chamber, respectively.

Abstract: A wet treatment method useful in at least one of a chemical processing step and a rinsing step performed upon fabrication of semiconductor devices is disclosed. According to this method, a substrate under treatment is treated with a desired liquid while causing the substrate to revolve around an axis of rotation outside the substrate itself instead of allowing the substrate to rotate about the axis of rotation such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying a fresh liquid of the same kind as the desired liquid at a flow rate at least equal to a discharge rate of the desired liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force.

Abstract: Disclosed herein is a cleaning process for a substrate surface on which a high-density film and a low-density film lower in density than the high-density film are carried in combination. According to the cleaning process, a mixed gas of anhydrous hydrogen fluoride gas and a heated inert gas is brought into contact with the substrate surface such that at least a portion of the low-density film is removed without impairing the high-density film beyond a tolerance. The substrate is, for example, a semiconductor substrate.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.