Patents Assigned to M. Setek Co., Ltd.
  • METHOD AND APPARATUS FOR PROCESSING SILICON PARTICLES
    Publication number: 20090274596
    Abstract: Silicon particles in waste liquid can be highly efficiently separated with inexpensive equipment to be reused as raw material for production of a single-crystal silicon ingot.
    Type: Application
    Filed: April 25, 2006
    Publication date: November 5, 2009
    Applicants: IHI COMPRESSOR AND MACHINERY CO., LTD., M. SETEK CO., LTD.
    Inventors: Katsumi Takahashi, Masaya Tanaka, Hiroyuki Saito, Haruyuki Kinami, Takeshi Sasaki
  • Method for scrubbing substrate
    Patent number: 5795401
    Abstract: An improved method for scrubbing a substrate, the method including the step of scrubbing one face of the substrate with a cylindrical rotary brush while applying back pressure to the substrate by jetting a fluid for generating back pressure against the other face of the substrate.
    Type: Grant
    Filed: October 10, 1996
    Date of Patent: August 18, 1998
    Assignee: M. Setek Co., Ltd.
    Inventors: Takashi Itoh, Hiroyuki Saitoh, Haruyuki Kinami, Toshinori Konaka, Tsuyoshi Murai
  • Apparatus for scrubbing substrate
    Patent number: 5465447
    Abstract: Improved method and apparatus for scrubbing a substrate are provided, the method including the step of scrubbing one face of the substrate with a cylindrical rotary brush while applying back pressure to the substrate by jetting a fluid for generating back pressure against the other face of the substrate.
    Type: Grant
    Filed: September 7, 1994
    Date of Patent: November 14, 1995
    Assignee: M. Setek Co., Ltd.
    Inventors: Takashi Itoh, Hiroyuki Saitoh, Haruyuki Kinami, Toshinori Konaka, Tsuyoshi Murai
  • Method of fabricating semiconductor substrate having very shallow impurity diffusion layer
    Patent number: 5270250
    Abstract: A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: December 14, 1993
    Assignee: M. Setek Co., Ltd.
    Inventors: Tsuyoshi Murai, Shigeaki Nakamura, Toshinori Konaka, Shigeru Mizuno