Patents Assigned to M2N Inc.
  • Patent number: 9671431
    Abstract: There is provided a probe card in contact with pads formed on a plurality of semiconductor dies on a wafer to test the semiconductor dies. The probe card includes a printed circuit board on which a plurality of pads are formed; a block plate having a plurality of grooves and attached to the printed circuit board; a plurality of sub-probe units equipped with a plurality of probe tips in contact with the pads of the semiconductor dies and detachably coupled to the plurality of grooves; and a plurality of interposer/space transformer units interposed between the sub-probe units and the printed circuit board and configured to electrically connect the probe tips to the pads of the printed circuit board and transform a pitch of the pads formed on the printed circuit to a pitch of the plurality of probe tips.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: June 6, 2017
    Assignee: M2N INC.
    Inventor: Young Geun Park
  • Publication number: 20130342232
    Abstract: There is provided a probe card in contact with pads formed on a plurality of semiconductor dies on a wafer to test the semiconductor dies. The probe card includes a printed circuit board on which a plurality of pads are formed; a block plate having a plurality of grooves and attached to the printed circuit board; a plurality of sub-probe units equipped with a plurality of probe tips in contact with the pads of the semiconductor dies and detachably coupled to the plurality of grooves; and a plurality of interposer/space transformer units interposed between the sub-probe units and the printed circuit board and configured to electrically connect the probe tips to the pads of the printed circuit board and transform a pitch of the pads formed on the printed circuit to a pitch of the plurality of probe tips.
    Type: Application
    Filed: April 28, 2011
    Publication date: December 26, 2013
    Applicant: M2N INC.
    Inventor: Young Geun Park
  • Patent number: 8287745
    Abstract: Disclosed is a method for fabricating a probe tip, capable of preventing a rapid increase of a surface size of a front end of the probe tip as the probe tip is worn out by a frequent contact with a wafer chip and, also, capable of improving the precision of the front end of the probe tip. The method for fabricating a probe tip includes forming a front end of the probe tip on a silicon wafer; forming a first protective layer which is patterned to expose a part of the front end of the probe tip; and forming a body of the probe tip in a portion opened by the pattern of the first protective layer.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: October 16, 2012
    Assignee: M2N Inc.
    Inventors: Ki Pil Hong, Jong Hyeon Chae, Hac Ju Lee
  • Patent number: 7767101
    Abstract: A method of fabricating a probe tip for use in a scanning probe microscope, includes the steps of: forming a triangular prism provided with a passivation film by patterning a {111} general silicon wafer, the passivation film being deposited on two sidewalls of the triangular prism; etching the silicon wafer to make the triangular prism into a probe tip of a triangular pyramid shape; and removing the passivation film.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: August 3, 2010
    Assignee: M2N Inc.
    Inventors: Young Geun Park, Hee Ok Jang
  • Publication number: 20100163518
    Abstract: Disclosed is a method for fabricating a probe tip, capable of preventing a rapid increase of a surface size of a front end of the probe tip as the probe tip is worn out by a frequent contact with a wafer chip and, also, capable of improving the precision of the front end of the probe tip. The method for fabricating a probe tip includes forming a front end of the probe tip on a silicon wafer; forming a first protective layer which is patterned to expose a part of the front end of the probe tip; and forming a body of the probe tip in a portion opened by the pattern of the first protective layer.
    Type: Application
    Filed: May 29, 2008
    Publication date: July 1, 2010
    Applicant: M2N INC.
    Inventors: Ki Pil Hong, Jong Hyeon Chae, Hac Ju Lee
  • Publication number: 20100134126
    Abstract: A probe for making electric contact with a contact target includes a first part (10) including a first base portion (15) and a socket portion (17) formed on the first base portion; and a second part including (20) a second base portion (25) and a plug portion (21) formed on the second base portion. And the plug portion is removably coupled to the socket portion.
    Type: Application
    Filed: March 31, 2005
    Publication date: June 3, 2010
    Applicants: M2N, INC., SECRON CO., LTD.
    Inventors: Ki-Pil Hong, Jong-Hyeon Chae, Hac-Ju Lee, Young-Gun Park
  • Publication number: 20080272087
    Abstract: A method of fabricating a probe tip for use in a scanning probe microscope, includes the steps of: forming a triangular prism provided with a passivation film by patterning a {111} general silicon wafer, the passivation film being deposited on two sidewalls of the triangular prism; etching the silicon wafer to make the triangular prism into a probe tip of a triangular pyramid shape; and removing the passivation film.
    Type: Application
    Filed: May 24, 2007
    Publication date: November 6, 2008
    Applicant: M2N INC.
    Inventors: Young Geun Park, Hee Ok Jang
  • Publication number: 20060073627
    Abstract: A method for fabricating a probe for a scanning probe microscope, wherein the probe includes a mounting block, a cantilever and a tip, includes the steps of: forming a first mask to define a pattern for the tip and a second mask to define a pattern for the cantilever on an SOI wafer having a handle layer containing {100} single-crystalline silicon, an insulating layer and a device layer containing {111} single-crystalline silicon; etching the device layer by using the first and the second masks; forming a sidewall passivation layer on the device layer; etching the device layer by using the first mask to form the tip; etching the handle layer by using a third mask to define a pattern for the mounting block. By using the method, a probe made of {111} single-crystalline silicon can be fabricated with high yield.
    Type: Application
    Filed: March 31, 2004
    Publication date: April 6, 2006
    Applicant: M2N INC.
    Inventors: Young-Geun Park, Kyu-Ho Hwang
  • Patent number: 6995499
    Abstract: There is provided a micro piezoelectric actuator, an optical switching device including the micro piezoelectric actuator and a method for fabricating the same. The optical switching device includes a mirror, a first actuator for adjusting the tilt angle of the mirror on the X axis, a second actuator for adjusting the tilt angles of the mirror and the first actuator on the Y axis and a driving substrate for applying a driving signal to the first and second actuators. Each of the actuators has membranes, a piezoelectric device formed on each of the membranes and a connecting part having two elastic bodies coupled to the membranes and a connecting member coupled between the two elastic bodies. In this way, the optical switching device can tilt the mirror on the X axis independently from the tilting thereof on the Y axis.
    Type: Grant
    Filed: April 17, 2002
    Date of Patent: February 7, 2006
    Assignee: M2N Inc.
    Inventor: Kyu-Ho Hwang