Abstract: Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

Abstract: A communication interface comprising a host with non-linear equalizers configured to perform non-linear equalization. Also part of the interface is a host to optic module channel electrically connecting the host to an optic module and the optic module. The optic module comprises a transmitter and a receiver. The transmitter includes a linear equalizer and an electrical to optical module configured to convert the equalized signal from the driver to an optical signal, and transmit the optical signal over a fiber optic cable, such that the transmitter does not perform non-linear processing. The receiver includes a photodetector, configured to convert the received optic signal to a received electrical signal, and a linear amplifier configured to perform linear amplification on the received electrical signal. A driver sends the amplified received signal over an optic module to host channel, such that the receive does not perform non-linear processing.

Abstract: An electrode structure for a device, such as a GaN or AlGaN device is described. In one example, a method to form the structure includes providing a substrate including gallium nitride material, forming an insulating layer over a surface of the substrate, forming an opening in the insulating layer to expose a surface region of the substrate, depositing a barrier metal layer over the insulating layer and onto the surface region of the substrate through the opening, and depositing a conducting metal layer over the barrier metal layer. In one case, the barrier metal layer includes a layer of tungsten nitride. The layer of tungsten nitride is deposited over the insulating layer and onto the surface region of the substrate using atomic layer deposition.

Abstract: An amplifier package includes a plurality of input leads, a plurality of transistor amplifiers having inputs respectively coupled to one of the plurality of input leads, and a quadrature hybrid coupler within the amplifier package and coupled between the plurality of input leads and the plurality of transistor amplifiers, wherein the quadrature hybrid coupler is configured to divide an input signal received from a first of the plurality of input leads between the plurality of transistor amplifiers.

Abstract: A dc coupled amplifier includes a pre-driver, and amplifier and a bias control circuit. The pre-driver is configured to receive one or more input signals and amplify the one or more input signals to create one or more pre-amplified signals. The amplifier has cascode configured transistors configured to receive and amplify the one or more pre-amplified signals to create one or more amplified signals, the amplifier further having an output driver termination element. The bias control circuit is connected between the pre-driver and the amplifier, the bias control circuit receiving at least one bias current from the output driver termination element of the amplifier, wherein the pre-driver, the amplifier and the bias control circuit are all formed on a same die.

Abstract: Various aspects of integrated amplifiers, layouts for the integrated amplifiers, and packaged arrangements of the amplifiers are described. In one example, an amplifier includes an amplifier cell, and a biasing network coupled to the common gate transistor in the amplifier cell. The amplifier cell includes a common source transistor and a common gate transistor in a cascode arrangement, where at least one of the common source transistor and the common gate transistor comprises a field plate. Among other advantages, the amplifiers described herein can be biased with relatively high voltages and still operate like a single a common source transistor, without sacrificing reliability, performance, or requiring additional off-chip components, such as biasing networks of resistors and inductors.

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

Abstract: Various aspects provide for error detection and compensation for a multiplexing transmitter. For example, a system can include an error detector circuit and a duty cycle correction circuit. The error detector circuit is configured to measure duty cycle error for a clock associated with a transmitter to generate error detector output based on a clock pattern for output generated by the transmitter in response to a defined bit pattern. The duty cycle correction circuit is configured to adjust the clock associated with the transmitter based on the error detector output. Additionally or alternatively, the error detector circuit is configured to measure quadrature error between an in-phase clock and a quadrature clock in response to the defined bit pattern. Additionally or alternatively, the system can include a quadrature error correction circuit configured to adjust phase shift between the in-phase clock and the quadrature clock based on quadrature error.

Abstract: A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

Abstract: A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

Abstract: A number of diode limiter semiconductor structures are described. The diode limiters can include a hybrid arrangement of diodes with different intrinsic regions, all formed over the same semiconductor substrate. In one example, a diode limiter includes a first diode having a first doped region formed to a first depth into an intrinsic layer of a semiconductor structure, a second diode having a second doped region formed to a second depth into the intrinsic layer of the semiconductor structure, and at least one passive component. The first diode includes a first effective intrinsic region of a first thickness, the second diode includes a second effective intrinsic region of a second thickness. The first thickness is greater than the second thickness. The passive component is over the intrinsic layer and electrically coupled as part of the diode limiter.

Abstract: Examples of printed circuit boards (PCBs) with board configuration blocks and board edge projections are described. In one example, a PCB includes a core material and a metal layer comprising a plurality of metal traces on the core material. The plurality of metal traces can include component interconnect traces and a board configuration block. The board configuration block can include a plan diagram for the PCB, an operational diagram for the PCB, or a combination of plan and operational diagrams. In other examples, a PCB can include a core material having a peripheral edge. The peripheral edge can include one or more board edge scheme projections positioned within projection edge regions of the peripheral edge. The scheme projections have a projection shape based on operational characteristics for the PCB. In some cases, the board configuration blocks can be located on the board edge scheme projections.

Abstract: A multi-level radio frequency (RF) integrated circuit component includes an upper level including at least one inductor, and a lower level including at least one conductive element that provides electrical connection to the at least one inductor. The lower level separates the at least one inductor from a lower surface that is configured to be attached to a conductive pad. Related integrated circuit device packages are also discussed.

Abstract: A monolithic, vertical, planar semiconductor structure with a number diodes having different intrinsic regions is described. The diodes have intrinsic regions of different thicknesses as compared to each other. In one example, the semiconductor structure includes an N-type silicon substrate, an intrinsic layer formed on the N-type silicon substrate, and a dielectric layer formed on the intrinsic layer. A number of openings are formed in the dielectric layer. Multiple anodes are sequentially formed into the intrinsic layer through the openings formed in the dielectric layer. For example, a first P-type region is formed through a first one the openings to a first depth into the intrinsic layer, and a second P-type region is formed through a second one of the openings to a second depth into the intrinsic layer. Additional P-type regions can be formed to other depths.

Abstract: A semiconductor device package includes a first and a second input lead and a plurality of uniform transistor-based components, the plurality of uniform transistor-based components comprising a first subset of the uniform transistor-based components coupled to the first input lead and a second subset of the uniform transistor-based components coupled to the second input lead. The first subset and the second subset are arranged in an asymmetric configuration with respect to one another.

Abstract: A device that includes a metal submount; a first transistor die arranged on said metal submount; a second transistor die arranged on said metal submount; a set of primary interconnects; and a set of secondary interconnects. Additionally, the set of primary interconnects and the set of secondary interconnects are configured to provide RF signal coupling between the first transistor die and the second transistor die by electromagnetic coupling.

Abstract: A digital step attenuator (DSA) cell and related method are provided. The DSA cell includes a first branch comprising a first resistor connected, at a first side, to an input port and, at a second side, to an output port; a second resistor connected, at a first side, to the first resistor and, at a second side, to a first transistor and a third resistor connected, at a first side, to the first resistor and, at a second side, to a second transistor. Also included in the DSA cell is a second branch, in a parallel configuration with the first resistor, that includes a fourth resistor and a third transistor. Also included is a third branch, in a parallel configuration with the first resistor, that includes a fourth transistor. The first transistor, the second transistor, the third transistor, and the fourth transistor are configured to be operated independently.

Abstract: A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and the drain finger.

Abstract: A transmit-received (TR) switch is designed such that the receiver-side shunt PIN diode acts as a switchable shunt diode while the switch operates in transmit mode and acts as a limiter while the switch operates in receive mode. This is achieved using a DC Schottky diode between the receiver-side shunt network and the biasing network. While the switch operates in receive mode, received radio frequency (RF) signals that exceed a power threshold cause the Schottky diode to become forward biased, causing the shunt PIN diode to act as a limiter that protects the receiver from excessively high RF signal power. This approach affords a high level of protection using a small number of components and without adding insertion loss to the RF signal path.

Abstract: A balun is enhanced with design features that extend the operational bandwidth of the balun allowing the balun to operate at lower frequencies. The design enhancements also suppress resonances that otherwise cause sudden power drops at a resonance frequency while a load is connected between the balun's differential outputs.