Abstract: A salicide integrate solution for embedded virtual-ground memory of the present invention provides a controlled distance between poly gates. In this way, the spacers formed on the sidewalls of the poly gates become self fill-upon spacers, and the surface of the substrate is not exposed. Thus, the salicides will not be formed on the surface of the substrate causing the connection of the buried diffusion regions. Moreover, the present invention provides two dummy poly gates located on the outside of the poly gates, so that the buried diffusion regions on the surface of the embedded virtual-ground memory are covered by the poly gates and self fill-up spacer. Utilizing the present invention, the process of forming salicides on the memory cell region and the peripheral logic region can be integrated together.
Type:
Grant
Filed:
January 16, 2001
Date of Patent:
March 11, 2003
Assignee:
Macronix International, Col, Ltd.
Inventors:
Chong-Jen Huang, Hsin-Huei Chen, Kuang-Wen Liu, Chih-Hao Wang