Patents Assigned to Mactronix International Co., Ltd.
  • Method for eliminating polysilicon residue by fully converting the polysilicon into silicon dioxide
    Patent number: 6642118
    Abstract: A method for eliminating polysilicon residue is provided by converting the polysilicon residue into silicon dioxide in two steps. A tilted ion implantation step is performed to implant oxygen ions into the polysilicon residue to rich oxygen containing of the polysilicon residue. An oxygen anneal step is subsequently performed to completely convert the rich oxygen containing polysilicon residue into silicon dioxide that can eliminate the conductivity of the polysilicon residue and prevent oxygen encroachment occurring.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: November 4, 2003
    Assignee: Mactronix International Co., Ltd.
    Inventors: Chun-Lien Su, Chun-Chi Wang, Ming-Shang Chen