Abstract: An ESD protection circuit using an N-type extended drain silicon controlled rectifier (N-EDSCR) and a method for fabricating the same are provided. An electro-static discharge (ESD) protection circuit includes a substrate, a well formed in the substrate, a drift region having a predetermined portion overlapped with the well, a plurality of first diffusion layers respectively formed in the well and the drift region, a plurality of second diffusion layers respectively formed in the well and the drift region, wherein corresponding first and second diffusion layers in the well are formed separately from each other and those in the drift region are formed adjacent to each other, a source region formed in a manner of surrounding a second conductive type diffusion layer inside the well, and a gate electrode formed on the well between the source and the drift region.

Abstract: Memory transactions are carried out in an order that maximizes concurrency in a memory system such as a multi-bank interleaved memory system. Read data is collected in a buffer memory to be presented back to the bus in the same order as read transactions were requested. An adaptive algorithm groups writes to minimize overhead associated with transitioning from reading to writing into memory.