Abstract: Magnetic integrated circuit structures exhibit desirable characteristics for purposes of realizing a magnetic semiconductor memory. In combination with a carrier-deflection-type magnetic field sensor, each of a variety of magnet structures realize a condition in which the magnetic field is substantially orthogonal to the direction of travel of carriers of a sense current, thereby achieving maximum sensitivity. In general, the magnetic structures are highly efficient and achieve a high degree of control of the magnetic field. As a result, a minimum-size device such as a MOS device suffices for purposes of sourcing a magnetizing current. By basing a magnetic memory cell on a single minimum-size MOS device, a small cell may be realized that compares favorably with a conventional DRAM or FLASH memory cell. The greater degree of control over the magnetic field afforded by the magnetic structures enables cross-coupling between cells in a memory array to be minimized.