Patents Assigned to Magnolia Optical Technologies, Inc.
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Patent number: 11817524Abstract: Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.Type: GrantFiled: November 15, 2021Date of Patent: November 14, 2023Assignee: Magnolia Optical Technologies, Inc.Inventors: Roger E. Welser, Ashok K. Sood
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Patent number: 11674851Abstract: A high-performance Microbolometer that incorporates vanadium oxide (VOx) along with carbon nanotubes (CNTs) or graphene. This Microbolometer, which uses a microbridge comprising Si3N4 and VOx, provides low noise and high dynamic range longwave infrared (LWIR) band detection. Addition of CNTs/graphene provides a high level of performance [low 1/f noise, noise equivalent temperature difference (NETD), and thermal time constant] due to the high temperature coefficient of resistance (TCR) of these materials.Type: GrantFiled: August 11, 2021Date of Patent: June 13, 2023Assignee: Magnolia Optical Technologies, Inc.Inventors: Ashok K. Sood, John W. Zeller
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Patent number: 11609122Abstract: The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.Type: GrantFiled: April 19, 2021Date of Patent: March 21, 2023Assignee: Magnolia Optical Technologies, Inc.Inventors: Ashok K. Sood, Elwood J. Egerton
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Patent number: 11509140Abstract: This invention presents an electronically configurable architecture where the plurality of photovoltaic panels can be connected to deliver the maximum power output. This architecture provides maximum power point to the maximum number of photovoltaic panels by connecting them in parallel. Under-rated panels are dynamically coupled with over-rated or maximum-rated panels in a series-connected architecture to utilize the under rated power in the final delivery. Notable efficiency improvements may be observed in contrast to the prevailing optimization with minimum power drop out architecture. The architectural modifications are proposed with bi-stable electromagnetic changeover contacts to minimize the power dissipation in control side. Moreover the rearrangement in connection architecture is proposed to be communicated on instance and regular basis through SMS and SPI protocol for easy fault diagnosis by the service personnel from the proposed data mining firmware.Type: GrantFiled: November 23, 2020Date of Patent: November 22, 2022Assignee: Magnolia Optical Technologies, Inc.Inventors: Palash Das, Dhrubes Biswas
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Patent number: 11404643Abstract: Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.Type: GrantFiled: March 16, 2020Date of Patent: August 2, 2022Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 11374187Abstract: Through selective incorporation of high carrier mobility graphene monolayers into low cost, NIR-sensitive SiGe detector layer structures, a device combining beneficial features from both technologies can be achieved. The SiGe in such hybrid SiGe/graphene detector devices serves as the NIR absorbing layer, or as the quantum dot material in certain device iterations. The bandgap of this SiGe layer where absorption of photons and photogeneration of carriers mainly takes place may be tuned by varying the concentrations of Ge in the SixGe1-x material. This bandgap and the thickness of this layer largely impact the degree and spectral characteristics of absorption properties, and thus the quantum efficiency or responsivity of the device. The main function and utility of the graphene monolayers, which are nearly transparent to incident light, is to facilitate the extraction and transport of electron and hole carriers from the SiGe absorbing layer through the device.Type: GrantFiled: April 22, 2020Date of Patent: June 28, 2022Assignee: Magnolia Optical Technologies, Inc.Inventors: John W. Zeller, Yash R. Puri, Ashok K. Sood
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Patent number: 11340108Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.Type: GrantFiled: September 28, 2020Date of Patent: May 24, 2022Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 11177400Abstract: Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.Type: GrantFiled: September 18, 2017Date of Patent: November 16, 2021Assignee: Magnolia Optical Technologies, Inc.Inventors: Roger E. Welser, Ashok K. Sood
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Patent number: 10983010Abstract: The present disclosure is an infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR transmissive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.Type: GrantFiled: May 28, 2019Date of Patent: April 20, 2021Assignee: Magnolia Optical Technologies, Inc.Inventors: Ashok K. Sood, Elwood J. Egerton
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Patent number: 10937914Abstract: Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of graphene nanoribbons, first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance, increasing sensitivity to IR radiation. Absorption over a wide wavelength range (200 nm to 1 mm) is possible based on the three alternative devices structures described within. Devices can variously include (a) a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules, (b) graphene layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector, and/or (c) tuned graphene layers layered on top of each other where a p-type layer and a n-type layer is created using a combination of oxidation and doping.Type: GrantFiled: May 20, 2019Date of Patent: March 2, 2021Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 10847976Abstract: This invention presents an electronically configurable architecture where the plurality of photovoltaic panels can be connected to deliver the maximum power output. This architecture provides maximum power point to the maximum number of photovoltaic panels by connecting them in parallel. Under-rated panels are dynamically coupled with over-rated or maximum-rated panels in a series-connected architecture to utilize the under rated power in the final delivery. Notable efficiency improvements may be observed in contrast to the prevailing optimization with minimum power drop out architecture. The architectural modifications are proposed with bi-stable electromagnetic changeover contacts to minimize the power dissipation in control side. Moreover the rearrangement in connection architecture is proposed to be communicated on instance and regular basis through SMS and SPI protocol for easy fault diagnosis by the service personnel from the proposed data mining firmware.Type: GrantFiled: September 10, 2018Date of Patent: November 24, 2020Assignee: Magnolia Optical Technologies, Inc.Inventors: Palash Das, Dhrubes Biswas
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Patent number: 10788364Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.Type: GrantFiled: July 8, 2019Date of Patent: September 29, 2020Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 10593883Abstract: Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.Type: GrantFiled: December 19, 2016Date of Patent: March 17, 2020Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 10345143Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.Type: GrantFiled: April 16, 2018Date of Patent: July 9, 2019Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 10302498Abstract: The present disclosure is an infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR transmissive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.Type: GrantFiled: December 22, 2017Date of Patent: May 28, 2019Assignee: Magnolia Optical Technologies, Inc.Inventors: Ashok K. Sood, Elwood J. Egerton
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Patent number: 10297700Abstract: Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of graphene nanoribbons, first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance, increasing sensitivity to IR radiation. Absorption over a wide wavelength range (200 nm to 1 mm) is possible based on the three alternative devices structures described within. Devices can variously include (a) a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules, (b) graphene layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector, and/or (c) tuned graphene layers layered on top of each other where a p-type layer and a n-type layer is created using a combination of oxidation and doping.Type: GrantFiled: April 28, 2017Date of Patent: May 21, 2019Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 10281617Abstract: Durable hydrophobic antireflection structures for optical elements, optical windows, and front sheets of encapsulated photovoltaic and photonic devices are disclosed which can minimize reflection losses over the entire accessible portion of the solar spectrum simultaneously provide self-cleaning and finger-print-free surface. Reduced reflectance and self-cleaning surfaces are resulted from coating the front sheet of encapsulated device with combination of nonporous and porous nanostructured materials such as silicon dioxide nanorods and PTFE. Step-graded antireflection structures can exhibit excellent omnidirectional performance, significantly outperforming conventional quarter wavelength and low-high-low refractive index coatings. Methods of constructing nanostructured durable optical coatings with hydrophobic surfaces are disclosed that can cover large-area ridged and flexible substrates.Type: GrantFiled: July 25, 2016Date of Patent: May 7, 2019Assignee: Magnolia Optical Technologies, Inc.Inventors: Gopal G. Pethuraja, Roger E. Welser, Yash R. Puri, Ashok K. Sood
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Patent number: 10283657Abstract: The invention described herein details flexible, high-efficiency photovoltaic cells with nano-enhanced absorbers and ultra-low dark current. By extending infrared absorption, power conversion efficiencies in single-junction, nano-enhanced solar cells can potentially meet or even exceed the Shockley-Queisser limit. Novel device designs utilizing advanced band gap engineering are employed to suppress non-radiative recombination and expose the limiting radiative component of the dark current. Light trapping structures and new nanostructured absorber designs are also considered to maximize the creation and collection of photogenerated carriers. Flexible photovoltaic devices are fabricated using established full-wafer epitaxial liftoff processes. The innovative design described herein provides for light-weight and flexible photovoltaic sheets capable of achieving ultra-high conversion efficiencies over a wide range of operating conditions.Type: GrantFiled: March 14, 2014Date of Patent: May 7, 2019Assignee: Magnolia Optical Technologies, Inc.Inventors: Roger E. Welser, Ashok K. Sood
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Patent number: 9945720Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.Type: GrantFiled: December 22, 2015Date of Patent: April 17, 2018Assignee: Magnolia Optical Technologies, Inc.Inventors: Elwood J. Egerton, Ashok K. Sood
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Patent number: 9851257Abstract: The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.Type: GrantFiled: December 28, 2016Date of Patent: December 26, 2017Assignee: Magnolia Optical Technologies, Inc.Inventors: Ashok K. Sood, Elwood J. Egerton