Abstract: The formation of a transparent conductive ZnO film on a substrate in accordance with the chemical vapor deposition process is accomplished herein by a method characterized by feeding purified water and an organic metal material for Zn as separately entrained by a carrier gas into a vacuum chamber having a reduced inner pressure, adjusting the gas pressure inside the vacuum chamber to a level in the range of from 1 to 30 Torrs, supplying diborane gas or a compound containing boron or aluminum into the vacuum chamber, heating a substrate disposed inside the chamber to a prescribed temperature, and performing the ensuant formation of a film under the adjusted gas pressure mentioned above. Preferably, the formation of the film on the substrate disposed inside the vacuum chamber is carried out while the substrate is kept irradiated with ultraviolet light.

Abstract: An electroluminescent device wherein a light-emitting layer is formed between electrode layers, and a selenium layer is formed between the light-emitting layer and at least one of the electrode layers. Each of the crystals in the selenium layer grows in a columnar shape in the direction extending at right angles to the light-emitting layer.