Abstract: The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.
Type:
Grant
Filed:
February 24, 2003
Date of Patent:
May 31, 2005
Assignee:
Man Wong, The Hong Kong University of Science & Technology