Abstract: Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating film as an etch mask is performed to pattern the copper film. It is thus possible to form copper wirings for high voltage elements the width of which is very wide. Furthermore, a wet etch process using a chemical aqueous solution is performed instead of a copper polishing process. The cost for forming a metal wiring can be thus saved. Moreover, by controlling a wet etch time, the space between metal wirings, which is narrower than a width of the metal wiring, can be secured sufficiently.

Abstract: Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating film as an etch mask is performed to pattern the copper film. It is thus possible to form copper wirings for high voltage elements the width of which is very wide. Furthermore, a wet etch process using a chemical aqueous solution is performed instead of a copper polishing process. The cost for forming a metal wiring can be thus saved. Moreover, by controlling a wet etch time, the space between metal wirings, which is narrower than a width of the metal wiring, can be secured sufficiently.

Abstract: A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask; forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region; forming a color filter, a planarization layer and a microlens, sequentially; forming a low temperature oxide layer on the above structure to protect the microlens; and opening the pad metal by selectively etching the low temperature oxide layer and the oxide layer formed around the pad open region by a second pad mask.