Patents Assigned to Marlin Semiconductor Limited
  • Semiconductor device and method for fabricating the same
    Patent number: 11901437
    Abstract: A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric constant of the offset spacer is higher than a dielectric constant of the main spacer.
    Type: Grant
    Filed: May 15, 2022
    Date of Patent: February 13, 2024
    Assignee: Marlin Semiconductor Limited
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20220278225
    Abstract: A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric constant of the offset spacer is higher than a dielectric constant of the main spacer.
    Type: Application
    Filed: May 15, 2022
    Publication date: September 1, 2022
    Applicant: Marlin Semiconductor Limited
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
  • Semiconductor device and method for fabricating the same
    Patent number: 11355619
    Abstract: A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric constant of the offset spacer is higher than a dielectric constant of the main spacer.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: June 7, 2022
    Assignee: Marlin Semiconductor Limited
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang