Abstract: A polishing method using a polishing pad including a specific adsorption layer. The polishing pad has an adsorption layer including a silicone including linear polyorganosiloxane having vinyl groups only at both ends, and the like. The polishing pad is fixed to a surface plate, and a product to be polished is pressed against the polishing pad, and simultaneously slid to polish the product to be polished. In this case, the surface roughness (Ra) of the surface plate is set to 0.01 to 0.7 ?m, and the adsorption layer of the polishing pad is then adsorbed and fixed to the surface plate to perform polishing work. By adjusting the surface roughness of the surface plate as described above, a surface of the product to be polished can be inhibited from being unpredictably scratched or roughened. The method for adjusting the surface roughness of the surface plate is preferably a method in which a film having a surface roughness as described above is bonded to a surface of the surface plate.

Abstract: The present invention relates to improvement of a surface plate to be used in a polishing apparatus, with a polishing pad to be attached on the surface plate. The surface plate of the present invention includes: a surface plate body; and a release layer including a release film or release paper formed on a surface of the surface plate body on which the polishing pad is to be attached. The release layer has a peel force of a surface thereof of 0.08 N/50 mm or more and 5.0 N/50 mm or less. The present invention can be suitably used in a polishing apparatus utilizing a general polishing pad including a pressure-sensitive adhesive. The present invention allows polishing pad fixing work and replacement work to be performed more easily than in a conventional technique.

Abstract: A polishing method using a polishing pad including a specific adsorption layer. The polishing pad has an adsorption layer including a silicone including linear polyorganosiloxane having vinyl groups only at both ends, and the like. The polishing pad is fixed to a surface plate, and a product to be polished is pressed against the polishing pad, and simultaneously slid to polish the product to be polished. In this case, the surface roughness (Ra) of the surface plate is set to 0.01 to 0.7 ?m, and the adsorption layer of the polishing pad is then adsorbed and fixed to the surface plate to perform polishing work. By adjusting the surface roughness of the surface plate as described above, a surface of the product to be polished can be inhibited from being unpredictably scratched or roughened. The method for adjusting the surface roughness of the surface plate is preferably a method in which a film having a surface roughness as described above is bonded to a surface of the surface plate.

Abstract: The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.

Abstract: The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.

Abstract: To provide a polishing pad (14) useful for polishing semiconductor materials having a high hardness. The polishing pad (14) is used for polishing a workpiece (16) in combination with loose grains and comprises a polishing surface (15) comprising a textile of high-tenacity organic fibers, the fiber has a tenacity of not lower than 15 cN/dtex. In the textile, the high-tenacity organic fiber may have a single fiber fineness within the range between 0.3 dtex and 15 dtex, or a total fineness of within the range between 3 dtex and 3,000 dtex. The fiber may include, for example, a fully-aromatic polyester fiber.

Abstract: To provide a polishing pad (14) useful for polishing semiconductor materials having a high hardness. The polishing pad (14) is used for polishing a workpiece (16) in combination with loose grains and comprises a polishing surface (15) comprising a textile of high-tenacity organic fibers, the fiber has a tenacity of not lower than 15 cN/dtex. In the textile, the high-tenacity organic fiber may have a single fiber fineness within the range between 0.3 dtex and 15 dtex, or a total fineness of within the range between 3 dtex and 3,000 dtex. The fiber may include, for example, a fully-aromatic polyester fiber.