Patents Assigned to Masachusetts Institute of Technology
  • Patent number: 8786485
    Abstract: Described are a method and system for detecting and locating changes in an underground region. Changes are detected using a mobile coherent change detection ground penetrating radar (GPR). The GPR system is located on a mobile platform that makes two more measurement passes over the same route to acquire GPR images of an underground region at different times. A lateral offset between the GPR images for the two different times is determined and applied to one of the GPR images to generate a GPR shifted image that is spatially aligned with the other GPR image using a correlation process or other technique. A GPR difference image is generated from the GPR shifted image and the other GPR image. The GPR difference image includes data representative of changes to the underground region that occurred between the two measurement passes.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: July 22, 2014
    Assignee: Masachusetts Institute of Technology
    Inventors: Robert George Atkins, Justin John Brooke, Matthew Tyler Cornick, Beijia Zhang
  • Patent number: 6713326
    Abstract: A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1−xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1−yGey layer, a thin strained Si1−zGez layer and another relaxed Si1−yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1−yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1−yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1−xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects.
    Type: Grant
    Filed: March 4, 2003
    Date of Patent: March 30, 2004
    Assignee: Masachusetts Institute of Technology
    Inventors: Zhi-Yuan Cheng, Eugene A. Fitzgerald, Dimitri A. Antoniadis, Judy L. Hoyt
  • Patent number: 5671045
    Abstract: Microwave-induced plasma for continuous, real time trace element monitoring under harsh and variable conditions. The sensor includes a source of high power microwave energy and a shorted waveguide made of a microwave conductive, high temperature capability refractory material communicating with the source of the microwave energy to generate a plasma. The high power waveguide is constructed to be robust in a hot, hostile environment. It includes an aperture for the passage of gases to be analyzed and a spectrometer is connected to receive light from the plasma. Provision is made for real time in situ calibration. The spectrometer disperses the light, which is then analyzed by a computer. The sensor is capable of making continuous, real time quantitative measurements of desired elements, such as the heavy metals lead and mercury. The invention may be incorporated into a high temperature process device and implemented in situ for example, such as with a DC graphite electrode plasma arc furnace.
    Type: Grant
    Filed: October 6, 1995
    Date of Patent: September 23, 1997
    Assignee: Masachusetts Institute of Technology
    Inventors: Paul P. Woskov, Daniel R. Cohn, Charles H. Titus, Jeffrey E. Surma
  • Patent number: 5259444
    Abstract: Regenerative heat exchangers are described for transferring heat between hot and cold fluids. The heat exchangers have seal-leakage rates significantly less than those of conventional regenerative heat exchangers because the matrix is discontinuously moved and is releasably sealed while in a stationary position. Both rotary and modular heat exchangers are described. Also described are methods for transferring heat between a hot and cold fluid using the discontinuous movement of matrices.
    Type: Grant
    Filed: November 5, 1990
    Date of Patent: November 9, 1993
    Assignee: Masachusetts Institute of Technology
    Inventor: David G. Wilson