Patents Assigned to Mass. Institute of Technology
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Publication number: 20110318730Abstract: Cell cultures are provided that include a population of micropatterened hepatocytes and one or more non-parenchymal cell populations, where the hepatocytes are infected with a virus or parasite and include a reporter of virus or parasite infection. Methods of making and using the cell cultures are also provided.Type: ApplicationFiled: July 7, 2009Publication date: December 29, 2011Applicants: THE ROCKEFELLER UNIVERSITY, MASS INSTITUTE OF TECHNOLOGYInventors: Charles M. Rice, III, Christopher Thomas Jones, Alexander Ploss, Sangeeta N. Bhatia, Salman Khetani
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Patent number: 7429735Abstract: The invention is directed to systems and methods of digital signal processing and in particular to systems and methods for measurements of thermoreflectance signals, even when they are smaller than the code width of a digital detector used for detection. For example, in some embodiments, the number of measurements done is selected to be sufficiently large so as to obtain an uncertainty less than the code width of the detector. This allows for obtaining images having an enhanced temperature resolution. The invention is also directed to methods for predicting the uncertainty in measurement of the signal based on one or more noise variables associated with the detection process and the number of measurement iterations.Type: GrantFiled: March 15, 2006Date of Patent: September 30, 2008Assignees: Mass Institute of Technology (MIT), Mount Holyoke CollegeInventors: Dietrich Lueerssen, Rajeev J. Ram, Janice A. Hudgings, Peter M. Mayer
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Publication number: 20080078366Abstract: A toy projectile launching device for launching toy projectiles includes a spring shaped as a hollow hemisphere that is capable of being at least partially inverted from a primary normally convex position to a secondary at least partially inverted loaded position. Upon release, the spring snaps back to the primary position, thereby launching the toy projectile.Type: ApplicationFiled: February 5, 2007Publication date: April 3, 2008Applicant: Mass Institute of TechnologyInventors: William James Fienup, Barry Kudrowitz, David Wallace
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Publication number: 20080063989Abstract: Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 ?m?1, or lower than about 1 ?m?1, or lower than about 0.5 ?m?1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.Type: ApplicationFiled: May 29, 2007Publication date: March 13, 2008Applicant: MASS INSTITUTE OF TECHNOLOGYInventors: Theodore Fedynyshyn, Indira Pottebaum
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Publication number: 20070171526Abstract: Methods and systems for determining position relative to a stereographic pattern generator including capturing an image of a stereographic pattern from a known stereographic pattern generator with a viewer. The location of portion of the stereographic pattern is determined relative to the stereographic pattern generator is then determined with a processor. The location information is used to find the orientation of the viewer relative to the pattern generator.Type: ApplicationFiled: January 26, 2006Publication date: July 26, 2007Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Eric Feron
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Publication number: 20060249704Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.Type: ApplicationFiled: May 3, 2005Publication date: November 9, 2006Applicants: MASS INSTITUTE OF TECHNOLOGY (MIT), The Trustees of Boston CollegeInventors: Zhifeng Ren, Gang Chen, Bed Poudel, Shankar Kumar, Wenzhong Wang, Mildred Dresselhaus
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Publication number: 20060251569Abstract: The present invention provides methods for synthesis of IV-VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20° C. to about 360° C., for a duration sufficient for generating nanoparticles as binary alloys of the IV-VI elements.Type: ApplicationFiled: May 3, 2005Publication date: November 9, 2006Applicants: MASS INSTITUTE OF TECHNOLOGY (MIT), The Trustees of Boston CollegeInventors: Zhifeng Ren, Gang Chen, Bed Poudel, Shankar Kumar, Wenzhong Wang, Mildred Dresselhaus
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Publication number: 20060102224Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5 kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.Type: ApplicationFiled: October 29, 2004Publication date: May 18, 2006Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventors: Gang Chen, Zhifeng Ren, Mildred Dresselhaus
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Publication number: 20060078820Abstract: Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.Type: ApplicationFiled: June 7, 2005Publication date: April 13, 2006Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Theodore Fedynyshyn
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Publication number: 20050252582Abstract: The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.Type: ApplicationFiled: April 6, 2005Publication date: November 17, 2005Applicants: MASS INSTITUTE OF TECHNOLOGY (MIT), The Trustees of Boston CollegeInventors: Zhifeng Ren, Gang Chen, Shankar Kumar, Hohyun Lee
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Publication number: 20050190988Abstract: Methods and systems for determining position relative to an interference pattern generator including capturing an image of an interference pattern from a known fringe pattern generator with a viewer. The phase of the interference pattern is then determined with a processor and the phase information is used to find the orientation of the viewer relative to the fringe pattern generator. The distance to the fringe pattern generator is also found based on the interference pattern and position data relative to the fringe pattern generator is derived.Type: ApplicationFiled: March 1, 2004Publication date: September 1, 2005Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Eric Feron
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Publication number: 20040110091Abstract: The present invention provides methods for lithography utilizing X-ray radiation. More particularly, the methods of the invention can be employed for lithography at wavelengths in a range between about 0.8 nm and 30 nm, and more particularly, at wavelengths in a range between 0.8 and 1.2 nm. The methods of the invention employ photoresist compositions having fluorinated polymers with a fluorine content of at least about 10% by weight to provide enhanced sensitivity for X-ray lithography.Type: ApplicationFiled: December 10, 2002Publication date: June 10, 2004Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Theodore H. Fedynyshyn
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Publication number: 20040009424Abstract: The present invention provides acid labile protecting groups that can be utilized to protect one or more monomeric units of a polymeric constituent of a photoresist composition suitable for use in lithography. For example, in one embodiment, the acid labile protecting group is selected to be t-butoxymethyl which can be employed to protect, e.g., a hydroxystyrene or an acrylic acid moiety. The photoresist compositions of the invention can be utilized at any wavelength suitable for lithography, and particularly, at wavelengths below 248 nm, e.g., 157 nm.Type: ApplicationFiled: February 28, 2003Publication date: January 15, 2004Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventors: Theodore H. Fedynyshyn, Michael Sworin, Roger Sinta
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Publication number: 20030157431Abstract: A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.Type: ApplicationFiled: October 16, 2002Publication date: August 21, 2003Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Theodore H. Fedynyshyn
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Publication number: 20030099897Abstract: The present invention describes encapsulated inorganic resists which are compatible with conventional resist processing and development. The encapsulated inorganic materials increase the plasma etch selectivity of the resists compared to conventional polymeric resists. In effect, these resist systems can act as photoimagable single layer hard mask. In a preferred embodiment, the encapsulated material includes inorganic core particles that are at least partially coated with a moiety having an acid labile or photo-labile protected acidic group such that, upon deprotection, the encapsulated material exhibits greater base solubility.Type: ApplicationFiled: February 25, 2002Publication date: May 29, 2003Applicant: MASS INSTITUTE OF TECHNOLOGY (MIT)Inventor: Theodore H. Fedynyshyn
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Patent number: 6311100Abstract: A technique is provided for utilizing a computer system to generate tool paths for the computed aided machining (CAM) in at least four axis of a selected workpiece or part, particularly a complex part having hidden surfaces. The technique involves storing in the computer system both a surface point representation of a workpiece, which representation contains a unique code for each surface point, and a representation of the tool for which the paths are to be generated. The workpiece surface is viewed from a discrete number of orientations and a map of surface points visible from each of the orientations is generated. The map is then used to obtain selected most promising access directions for access to voxels in the delta volume to be removed or for access to surface points for a finishing operation. Such most promising access directions may for example be obtained by thinning an access cone for the voxel/point.Type: GrantFiled: September 14, 1998Date of Patent: October 30, 2001Assignee: Mass. Institute of TechnologyInventors: Sanjay E. Sarma, Putta Laxmiprasad, Mahadevan Balasubramaniam
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Patent number: 5314524Abstract: A process and apparatus for improving metal production in ironmaking and steelmaking processes is disclosed. The use of an inert metallic conductor in the slag-containing crucible and the addition of a transition metal oxide to the slag are the disclosed process improvements.Type: GrantFiled: February 28, 1992Date of Patent: May 24, 1994Assignee: MIT (Mass. Institute of Technology)Inventors: Uday B. Pal, Gopala K. M. Gazula, Ali Hasham
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Patent number: 5223117Abstract: Self-assembly of a chemically insensitive redox material, such as ferrocenyl thiol, and a chemically sensitive redox material, such as a quinone thiol, onto microelectrodes forms the basis for a two-terminal, voltammetric microsensor having reference and sensor functions on the same electrode. Detection is based on measuring the potential difference of current peaks for oxidation and reduction of the reference (ferrocene) and indicator (quinone) in aqueous electrolyte in a two-terminal, linear sweep voltammogram using a counterelectrode of relatively large surface area. Use of microelectrodes modified with monolayer coverages of reference and indicator molecules minimizes the size of the counterelectrode and the perturbation of the solution interrogated. Key advantages are that the sensor requires no separate reference electrode and the sensor functions as long as current peaks can be located for reference and indicator molecules.Type: GrantFiled: May 3, 1991Date of Patent: June 29, 1993Assignees: Mass. Institute of Technology, Pres. & Fellows of Harvard CollegeInventors: Mark S. Wrighton, James J. Hickman, Paul E. Laibinis, David Ofer, Chad A. Mirkin, James R. Valentine, George M. Whitesides
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Patent number: 4663281Abstract: Disclosed is a method of enhancing expression of recombinant DNA in eucaryotic cells. A tissue specific enhancer element obtained from the genome of an organism and active in a selected tissue type is combined with a transcriptionally competent transcription unit comprising a promoter and exons encoding for the proteinaceous material of interest (or its precursor). This recombinant DNA is transfected into cells derived from the same tissue as the tissue in which the enhancer element normally functions to enhance expression of endogeneous DNA. The resulting transformants express the exons of the transcription unit at high levels as the enhancer element increases the copy number of mRNA. The enhancer element operates to increase transcription independent of its orientation and position provided it is located within an active region on the DNA, generally between about 1-10 kilobases (kb) from the 3' or 5' end of the transcription unit.Type: GrantFiled: March 22, 1984Date of Patent: May 5, 1987Assignee: Mass Institute of TechnologyInventors: Stephen D. Gillies, Susumu Tonegawa
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Patent number: 4636404Abstract: A method and apparatus for reliably forming low resistance links between two aluminum conductors deposited on an insulating polysilicon or amorphous silicon layer, employ a laser to bridge a lateral gap between the conductors. The apparatus and method are ideally suited for implementing defect avoidance using redundancy in large random access memories and in complex VLSI circuits. Only a single level of metal is employed and leads to both higher density and lower capacitance in comparison to prior techniques. Resistances in the range of one to ten ohms can be achieved for gap widths of approximately two to three microns.Type: GrantFiled: September 17, 1984Date of Patent: January 13, 1987Assignee: Mass. Institute of TechnologyInventors: Jack I. Raffel, John A. Yasaitis, Glenn H. Chapman