Abstract: The invention is directed to systems and methods of digital signal processing and in particular to systems and methods for measurements of thermoreflectance signals, even when they are smaller than the code width of a digital detector used for detection. For example, in some embodiments, the number of measurements done is selected to be sufficiently large so as to obtain an uncertainty less than the code width of the detector. This allows for obtaining images having an enhanced temperature resolution. The invention is also directed to methods for predicting the uncertainty in measurement of the signal based on one or more noise variables associated with the detection process and the number of measurement iterations.

Abstract: Methods and systems for determining position relative to a stereographic pattern generator including capturing an image of a stereographic pattern from a known stereographic pattern generator with a viewer. The location of portion of the stereographic pattern is determined relative to the stereographic pattern generator is then determined with a processor. The location information is used to find the orientation of the viewer relative to the pattern generator.

Abstract: The present invention provides methods for synthesis of IV-VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20° C. to about 360° C., for a duration sufficient for generating nanoparticles as binary alloys of the IV-VI elements.

Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5 kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Abstract: Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

Abstract: The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

Abstract: Methods and systems for determining position relative to an interference pattern generator including capturing an image of an interference pattern from a known fringe pattern generator with a viewer. The phase of the interference pattern is then determined with a processor and the phase information is used to find the orientation of the viewer relative to the fringe pattern generator. The distance to the fringe pattern generator is also found based on the interference pattern and position data relative to the fringe pattern generator is derived.

Abstract: The present invention provides methods for lithography utilizing X-ray radiation. More particularly, the methods of the invention can be employed for lithography at wavelengths in a range between about 0.8 nm and 30 nm, and more particularly, at wavelengths in a range between 0.8 and 1.2 nm. The methods of the invention employ photoresist compositions having fluorinated polymers with a fluorine content of at least about 10% by weight to provide enhanced sensitivity for X-ray lithography.

Abstract: The present invention provides acid labile protecting groups that can be utilized to protect one or more monomeric units of a polymeric constituent of a photoresist composition suitable for use in lithography. For example, in one embodiment, the acid labile protecting group is selected to be t-butoxymethyl which can be employed to protect, e.g., a hydroxystyrene or an acrylic acid moiety. The photoresist compositions of the invention can be utilized at any wavelength suitable for lithography, and particularly, at wavelengths below 248 nm, e.g., 157 nm.

Abstract: A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.

Abstract: The present invention describes encapsulated inorganic resists which are compatible with conventional resist processing and development. The encapsulated inorganic materials increase the plasma etch selectivity of the resists compared to conventional polymeric resists. In effect, these resist systems can act as photoimagable single layer hard mask. In a preferred embodiment, the encapsulated material includes inorganic core particles that are at least partially coated with a moiety having an acid labile or photo-labile protected acidic group such that, upon deprotection, the encapsulated material exhibits greater base solubility.