Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).

Abstract: A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.

Abstract: A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

Abstract: A method is provided for imaging a workpiece by capturing successive frames of an elongate stationary field of view transverse to a workpiece transit path of a robot, while the workpiece is transported by the robot. The robot transit path is illuminated with an elongate illumination pattern transverse to the transit path to obtain a workpiece image of successive frames. Motion-induced image distortion is prevented or reduced adjusting the camera frame rate in real time in proportion to changes in robot velocity profile of the workpiece along the transit path.

Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

Abstract: An apparatus and process are described that allow electroplating to fill sub-micron, high aspect ratio semiconductor substrate features using a non-copper/pre-electroplating layer on at least upper portions of side walls of the features, thereby providing reliable bottom up accumulation of the electroplating fill material in the feature. This apparatus and process eliminates feature filling material voids and enhances reliability of the electroplating in the diminishing size of features associated with future technology nodes of 22, 15, 11, and 8 nm. The presence of non-copper pre-electroplating material on the side walls allows the feature whose side walls, but not bottom surface, are lined with such pre-electroplating material (such as cobalt) to fill the feature using electroplated fill material accumulating from the bottom of the feature up to reliability and predictability and substantially void-free.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

Abstract: Device for processing a substrate are described herein. Devices can include a radiation source and an aperture positioned to receive radiant energy from the radiation source. The aperture can include one or more members, and one or more interfering areas, wherein the interfering areas surround a transmissive area. The one or more structures can affect transmission of radiant energy through a portion of the transmissive area of the aperture. Structures disposed on the aperture can reduce or redirect transmission to provide for more uniform overall transmission of radiant energy through the aperture.

Abstract: Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using an adhesive material with desired characteristics. In one embodiment, an adhesive material suitable for joining semiconductor chamber components includes an adhesive material having a Young's-modulus lower than 300 psi. In another embodiment, a semiconductor chamber component includes a first surface disposed adjacent a second surface, and an adhesive material coupling the first and second surfaces, wherein the adhesive material has a Young's modulus lower than 300 psi.

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract: The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.

Abstract: Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.

Abstract: Embodiments of the present invention provide a vapor phase organic polymer film deposited using a CVD process at low temperature during a process sequence for wafer-level chip scale packaging (WL-CSP), including system-in package (SiP), Package-on-Package (PoP) and Package-in-Package (PiP).

Abstract: An apparatus for forming a pattern of a nanoparticle-based ink on a substrate has a printing apparatus that is energizable to deposit the nanoparticle-based ink in a pattern on a surface of the substrate. An illumination apparatus is energizable to direct a patterned illumination to cure the deposited ink pattern on the substrate, the illumination apparatus having an array having at least a first and a second laser diode, each laser diode coupled to a channel in a laser light coupling element through an optical fiber and having an illumination lens disposed to direct illumination from the coupling element onto the surface of the substrate. A transport apparatus is energizable to provide relative motion between the substrate and the illumination apparatus.

Abstract: An apparatus for forming a pattern of a nanoparticle ink on a substrate has a transport apparatus that is energizable to move the substrate in a direction and a printing apparatus that deposits the nanoparticle ink in a pattern on a surface of the moving substrate. An illumination apparatus directs a patterned illumination to cure the deposited ink pattern on the moving substrate, the illumination apparatus having a light source that generates light directed toward a uniformizer, a spatial light modulator energizable to form a patterned illumination from the uniformized light, and an illumination lens disposed to direct illumination from the spatial light modulator onto the surface of the moving substrate.

Abstract: A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.

Abstract: Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.

Abstract: The present invention generally relates to an apparatus for treating a substrate. The apparatus utilizes two plasma sources that operate in different phases (i.e., one positive phase while the other negative phase). By alternating phases, the current density is alternated between the sources such that one source can generate ions while the other source can generate electrons. Therefore, each adjacent source acts as the cathode in opposite to the anode of the adjacent source. By having adjacent sources having alternating phases, uniform deposition occurs.

Abstract: In one aspect, a self-lubricating component is provided for a pharmaceutical packaging assembly. The self-lubricating component comprises a polymer composition and an effective amount of a lubricating additive such as, for example, boron nitride. In another aspect, a pharmaceutical packaging assembly may be provided having a surface thereof coated with a lubricating composition comprising boron nitride. The pharmaceutical packaging composition may be, for example, a pre-filled syringe comprising a body (barrel) and a plunger assembly.