Abstract: An enhanced method for the post processing, i.e. oxidation or stabilization, of carbon materials including, but not limited to, carbon foams, carbon fibers, dense carbon-carbon composites, carbon/ceramic and carbon/metal composites, which method requires relatively very short and more effective such processing steps. The introduction of an “oxygen spill over catalyst” into the carbon precursor by blending with the carbon starting material or exposure of the carbon precursor to such a material supplies required oxygen at the atomic level and permits oxidation/stabilization of carbon materials in a fraction of the time and with a fraction of the energy normally required to accomplish such carbon processing steps. Carbon based foams, solids, composites and fiber products made utilizing this method are also described.

Abstract: A method for forming a magnetically oriented thin film on a substrate is disclosed wherein deposition pulses are alternated with magnetic field pulses. In particular, the method includes sputtering a target to deposit a first incremental layer of target material on the substrate, wherein the target is sputtered for a first sputtering time period and the first incremental layer includes randomly oriented first domains. The method further includes generating a magnetic field for orienting the first in a desired direction, wherein the magnetic field is generated for a first magnetic field time period which begins after the first sputtering time period ends. In addition, the method includes sputtering the target to deposit a second incremental layer of target material upon the first incremental layer; wherein the target is sputtered for a second sputtering time period which begins after the first magnetic field time period ends and the second incremental layer includes randomly oriented second domains.

Abstract: A device for rotating a substrate in a complex motion within a chamber which during a sputtering process. The device includes a first support element positioned within the chamber. The first support element includes a first rotating structure which is affixed between a platform for supporting the substrate and a first magnet positioned adjacent to the inner wall surface. Further, the first rotating structure is adapted to rotate about a first axis. The device further includes a second support element positioned outside of the chamber. The second support element includes a second rotating structure affixed between a planet gear adapted for engagement with a sun gear outside of the chamber and a second magnet positioned adjacent the outer wall surface and spaced apart from the first magnet. This causes the formation of a magnetic bond between the first and second magnets.

Abstract: A method is provided for depositing ultra high purity of greater than 99.998% titanium films which comprises generating gaseous TiI.sub.4 in situ by reacting titanium metal starting material with gaseous iodide in a reaction chamber, purifying the TiI.sub.4 by a double distillation process at reduced pressure to produce ultra high purity of greater than 99.998% TiI.sub.4, transferring the ultra high purity TiI.sub.4 in liquid form to a deposition chamber to vaporize the liquid TiI.sub.4 and contacting a heated titanium substrate with the TiI.sub.4 vapor, thereby depositing the ultra high purity Ti films on the substrate.

Abstract: A target assembly for use in a sputtering system used for forming a thin film on a substrate is disclosed. The target assembly includes a mounting element having an interior wall which defines an aperture. The target assembly further includes a target for providing material for forming the film on the substrate. In particular, the target is affixed within the mounting element by an interference fit between the aperture and the target. Furthermore, the mounting ring includes a groove for holding an O-ring which serves to maintain a vacuum in the sputtering system.

Abstract: An apparatus for processing at least a surface of an article with a uniform plasma includes a processing chamber in which the article is disposed and a plasma source. The plasma source includes a dielectric plate having a first surface forming part of an inner wall of the processing chamber, and an electrical energy source, including a radiofrequency source and a substantially planar induction coil, the latter of which is disposed on a second surface of the dielectric plate, and to which energy from the radiofrequency source is preferably supplied through impedance matching circuitry. The substantially planar induction coil has at least two spiral portions which are symmetrical about at least one point of the substantially planar induction coil, and preferably forming a continuous "S-shape".

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: The apparatus includes a gas diffuser plate having an integral heat pipe for accurately controlling the temperature of the diffuser plate during CVD processing to prevent unwanted tungsten (or other material) deposition on the diffuser plate. The apparatus is also useful as an RF plasma cleaning device in which the diffuser plate acts as an RF electrode, the heat pipe tube acts as an RF input lead, and the apparatus further includes a connector to an RF power source. Additionally, in combination, the heat pipe-cooled gas diffuser plate and RF electrode may be used advantageously in plasma enhanced chemical vapor deposition (PECVD).

Abstract: A system for sputtering a substrate is disclosed. The system includes a central housing having at least one process module for forming the layer, wherein the process module is in fluid communication with the central housing and includes a first device used in conjunction with forming the layer on the substrate. In addition, the system includes at least one service module in fluid communication with the central housing, wherein the service module includes at least one replacement device suitable for replacing the first device. The central housing includes a robotic element for transporting the first device from the process module to the service module and for transporting the replacement device from the service module to the process module in order to replace the first device. In addition, the service module includes a dedicated pump for evacuating the service module to a high vacuum in order to reduce surface outgassing of the replacement device to a desired level before use.

Abstract: A wafer heating chuck includes a backplane for mounting the wafer thereon. A rear surface of the backplane includes an outer annular recess with an outer angled wall. An outer annular heater is located within the recess and has an outer surface complementarily angled with respect to the wall. An inner annular heater resides inside the outer heater, adjacent the rear surface. A clamping member secured to the backplane includes inner and outer retainers which separately clamp the inner and outer heaters, respectively, to the backplane to assure solid to solid contact for optimum heat transfer therebetween. Each inner retainer is held by a radially cantilevered segment so that tightening of one inner retainer does not affect clamping force applied by adjacent inner retainers. Similarly, the outer retainers operate on cantilevered segments to yield independent clamping forces. Sensors sense backplane temperature at the inner and outer regions.

Abstract: A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished.

Abstract: A plasma noise and arcing suppressor apparatus and method includes a suppressor circuit electrically coupled between a DC power supply and a sputter target inside of a deposition chamber. The suppressor circuit includes an inductive element electrically connected in parallel with a rectifying element. An anode of the rectifying element is coupled to the negative output terminal of the DC power supply such that during a random fluctuation in sputtering current level at the output of the power supply, attributable to random electrical noise and arcing conditions in the sputtering plasma inside the chamber, the rectifying element is negatively biased and is generally non-conductive and the inductive element stores current energy from the sputtering current level fluctuation.

Abstract: The plasma processing system comprises a processing chamber with a processing space therein to contain a substrate. An electrical element is operable to couple electrical energy into the processing space to generate a plasma and is further operable to interrupt the power to the processing space to extinguish the plasma upon completion of the processing. An electrode positioned inside the chamber is electrically coupled to the substrate and to a DC bias power supply which selectively supplies DC power to the electrode to bias the substrate.

Abstract: A fixture for measuring the temperature of a chamber at a number of locations includes a body sized for placement within the chamber, and a number of temperature probes mounted on the body in orientations such that, when the body is placed within the chamber, the probes measure the temperature of the chamber at desired locations. The body also includes adjustable guides which engage the walls of the chamber to assist in positioning the body.

Abstract: A re-entrant plug structure is disclosed which extends inside a processing chamber containing an ionized plasma in proximity to the plasma to physically displace the ionized plasma and selectively controllably vary concentration of ionized gas particles over the surface of a wafer to be sputter etched which is supported inside the chamber. The variation of concentration of the ionized plasma allows the selectively controllable variation of sputter etch rates on the surface of the wafer. The re-entrant plug structure may be formed as part of the enclosure cover of the processing chamber or may be a separable moveable unit which is inserted into the plasma through an opening in the processing chamber. The re-entrant plug may be of various lengths, diameters and shapes to displace and shape the ionized plasma.

Abstract: A spiral magnetic linear translating mechanism for use with a wafer processing system which includes a plurality of evacuatable housings connected in a series to form a processing line comprises at least one wafer support structure which is mounted to move on a track through the housings along the processing line. The structure includes a base disposed proximate a wall of the housing and includes a plurality of magnetic thread segments extending thereon to face the wall. Outside of the housing, a cylindrical shaft is mounted proximate the wall. An elongated magnetic drive with successive sections is wound spirally around the shaft to rotate with the shaft so that the sections of the drive face the wall opposite the thread segments.