Abstract: A rotary sputtering target bonded to a backing tube such that the bonding material is applied only proximate the ends of the rotary sputtering target and is also between the target and the backing tube to form a gap between the rotary sputtering target and the backing tube and a device for bonding a rotary sputtering target to a backing tube.

Abstract: A rotary deposition target bonded to a backing tube such that the bonding material is applied only at the ends of the rotary sputtering target to form a gap between the rotary sputtering target and the backing tube to enable a target cooling fluid used during the deposition process to contact the target directly and to provide a hermetic seal to contain the cooling fluid within the gap and prevent the fluid from being exposed to the environment within the deposition chamber.

Abstract: Disclosed in this specification is a lead-free soldering alloy made of gold, tin and indium. The tin is present in a concentration of 17.5% to 20.5%, the indium is present in a concentration of 2.0% to 6.0% and the balance is gold and the alloy has a melting point between 290° C. and 340° C. and preferably between 300° C. and 340° C. The soldering alloy is particularly useful for hermetically sealing semiconductor devices since the melting temperature is sufficiently high to permit post-seal heating and sufficiently low to allow sealing of the semiconductor without causing damage.