Abstract: The semiconductor laser unit includes: a metal plate having a center portion wider than the remaining portions; a flexible substrate having a first opening; a substrate mounted on the center portion; a semiconductor laser placed on the substrate; a frame having a second opening and fixing the flexible substrate in the state of being bent along from the top surface to both side faces of the metal plate; and an optical element covering the second opening. The flexible substrate is fixed so that the first opening extends over the top surface and both side faces of the center portion.

Abstract: Aromatic methylidene compounds of the following general formula 1

Abstract: The top surface of a substrate in a peripheral circuit region is at a level that is higher than the top surface of the substrate in a memory cell region and that is substantially equal to the top surface of a floating gate electrode. A control gate electrode is formed on the floating gate electrode via a gate insulator film, and a gate electrode is formed on the substrate in the peripheral circuit region via a gate insulator film. The top surface of a buried insulator film for trench isolation may be at a level equal to the top surface of the floating gate electrode or to the top surface of an underlying film if the control gate electrode is formed of a multi-layer film. A level difference between the control gate electrode in the memory cell region and the gate electrode in the peripheral circuit region can be reduced, and thus fine patterns can be formed in these regions.