Abstract: Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2 or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.
Type:
Application
Filed:
January 27, 2003
Publication date:
July 31, 2003
Applicant:
MATSUSHITA ELECTRIC INDUSTRIAL CO., LITD.