Abstract: A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed to cover the gate electrode; and a second interlayer insulating film formed so as to be aligned in a direction parallel to the principal surface of the substrate and adjacent to the gate electrode with a part of the first interlayer insulating film interposed therebetween. The second interlayer insulating film has a lower relative permeability than the first interlayer insulating film.

Abstract: An information processing apparatus for executing a program, the apparatus including: a register set made up of a plurality of registers; a decoding unit for decoding machine language instructions in the program and extracting a selected instruction which indicates data transfer between a plurality of registers designated by a first operand, which is made up of a single field of at least one bit which shows whether an individual register out of the register set is designated and a group field which shows whether a plurality of other registers out of the register set are designated as a group, and consecutive addresses of memory designated by a second operand as an effective address of memory; a determining unit for determining whether each bit in the single field and group field of the first operand of the extracted machine language instruction is valid; a first generating unit for generating a register number for a register corresponding to a bit determined as being valid in the single field, a second genera