Abstract: The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

Abstract: A capacitor-mounted metal foil of the present invention is provided with a metal foil and a plurality of capacitors formed on the metal foil. Each of the capacitors includes a conductive layer disposed above the metal foil, and a dielectric layer disposed between the metal foil and the conductive layer.

Abstract: This invention provides a reader/writer, ID method and program comprising a response-detection unit of detecting normal responses and collisions from IC cards in response to a request; and a response-invalidation unit of sending a response-invalidation command, which is a command not to respond to requests in the future, to IC cards that sent normal responses when the response-detection unit received normal responses from IC cards even though collisions were detected.

Abstract: An I/O control apparatus comprises a temporary memory circuit divisible into a plurality of segments according to the type of an I/O request for temporarily storing data to and from an external system, and a notification means for notifying the external system of the amount of the data that can be transferred continuously between the external system and the temporary memory circuit in response to a data transfer amount request from the external system.

Abstract: The present invention provides a conductive adhesive and a packaging structure that can keep moisture-proof reliability even when a multipurpose base metal electrode is used. A conductive adhesive according to the present invention includes first particles having a standard electrode potential that is equal to or higher than a standard electrode potential of silver, and second particles having a standard electrode potential lower than a standard electrode potential of silver. A metal compound coating having a potential higher than that of metal particles as the first particles can be formed on a surface of an electrode having a potential lower than that of the metal particles.

Abstract: A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.

Abstract: A method achieves high performance MPEG-2 video variable length decoding as to improve MPEG-2 video decoding process on the whole. The method includes parsing bits, Huffman code decoding for macroblock address increment, decoding motion code, and decoding macroblocks including intra and non-intra macroblocks. This is suitable to any application that are compliant with MPEG-2 MP@ML or MP@ HL video standard. For example, in PC-DTV receiver application, with properly configured PC, one can receive DTV program in real time.

Abstract: There is provided a method for evaluating an insulating film entirely provided on a conductor layer for the characteristics or dimensions thereof. A measuring member having conductor bumps arranged thereon to be connected to wires is disposed above the insulating film on the conductor layer. Then, the conductor bumps are pressed against the insulating film with a given pressing force. By applying a voltage (electric stress) between the conductor bumps and the conductor layer, the characteristics including I-V characteristic, gate leakage current, and TDDB or the dimensions including thickness are evaluated.

Abstract: A discharge lamp which enables glare reduction, so that a lighting fixture can be simplified and reduced in weight. The discharge lamp includes an arc tube having a discharge space, a pair of electrodes having tips facing with each other within the discharge space, an outer tube enclosing the arc tube, a base that fixes one side of the outer tube, and two band-shaped light-intercepting films extending on a surface of the outer tube in the direction of the axis of the arc tube and in parallel with each other, wherein in at least one of the light-intercepting films, an extending portion is formed that extends on the side of the top of the outer tube with respect to the tip of the electrode within the discharge space and in the circumferential direction of the outer tube. Accordingly, unevenness in the intensity distribution of the light distribution pattern can be reduced, and generation of glare can be prevented.

Abstract: Ions of arsenic are selectively implanted at a high concentration into a substrate through a first passivation film of silicon dioxide to obtain a shallow junction, thereby forming a source region with a low resistivity and a first drain region. Then, after the first passivation film is removed, a second passivation film of silicon dioxide is deposited over the substrate as well as over a stacked cell electrode by a CVD process performed at a relatively low temperature. Thereafter, the substrate is annealed in a nitrogen ambient at such a temperature as activating the dopant introduced. In this manner, the dopant in source region and first drain region is activated.

Abstract: In a chamber, there are provided a sample stage on which a semiconductor substrate is placed, a gas inlet port for introducing etching gas, and a gas outlet port for exhausting the gas. A slide valve having a valve element which rotates relative to a valve seat is provided between the sample stage and the gas outlet port to adjust the amount of gas exhausted from the gas outlet port with the rotation of the valve element. A spiral coil for generating a high-frequency induction field and thereby changing the etching gas into a plasma is rotatably provided over the chamber. A rotation shift rotates the spiral coil in response to the rotation of the valve element of the slide valve such that the higher-voltage region of the spiral coil approximately coincides with the exhaust-side region of the slide valve.

Abstract: An optical recording device comprises: a basic pulse generator 60 including a starting-end pulse generation circuit 2, a burst gate generation circuit 4, and an end pulse generation circuit 6; a data-length detector 61 including a front mark detector 40, a front space detector 41, a recording mark detector 42, a back space detector 43 and a back mark detector 44; a timing controller 62 including a starting-end pulse selecting circuit 14, a starting-end starting position setting circuit 15, a starting-end pulse delaying circuit 19, an end pulse selecting circuit 21, an end starting position setting circuit 35 and an end pulse delaying circuit 25; a pulse synthesizer 63 including an AND gate 27 and an OR gate 36; and a laser driver 64 including an erasing current source 32, a recording current source 33, and a switch 34.

Abstract: A semiconductor chip is mounted on a first surface of a substrate, the substrate having wiring formed on the first surface, so that a circuit formation surface of the semiconductor chip faces the first surface of the substrate and that electrodes provided on the circuit formation surface are connected with the wiring. A sealing resin layer is then formed on the first surface of the substrate to cover the semiconductor chip. The sealing resin layer and the semiconductor chip are ground starting from a surface opposite to the circuit formation surface to thin the semiconductor chip.

Abstract: A motor has a stator having a plurality of teeth for receiving windings, a yoke connected to each tooth, and a rotor having permanent magnets facing the stator. An inner wall surface of each tooth faces the rotor with an air-gap therebetween. Each tooth is separated from an adjacent tooth by a slot-open-section extending between a tailing end of the tooth and a leading end of the adjacent tooth. The inner wall surface of each tooth has an arc extending from a center of the slot-open-section toward the tailing end. The air-gap at the tailing end of each tooth is greater than the air-gap at the leading end of each tooth. The inner wall surface of each tooth includes a straight-line tailing section extending from the center of the slot-open-section toward the leading end. The straight-line tailing section extends tangentially from the arc.

Abstract: A recording and reproducing apparatus is characterized in that said apparatus has: inputting means for receiving a packet data which is based on IEEE 1394, and in which signal information for indicating copy right information of an AV data (hereinafter, referred to as EMI) is provided in a header of a packet according to IEEE 1394; and recording and reproducing means for recording and reproducing an AV data and the EMI which are held in the packet data received by said inputting means. Four kinds of EMI are used, and, when an AV data indicating allowance “copy one generation” among them is to be recorded, said recording and reproducing means performs recording while rewriting the EMI to EMI indicating “no more copy.

Abstract: A body fat measuring apparatus is provided with a light emitting device 1 for projecting light rays to a subject's tissue, light receiving devices 3 and 4 for detecting a transmitted light ray having passed through the subject's tissue and/or a reflected light ray reflected inside the subject's body, and a CPU 6 for calculating the subject's subcutaneous fat thickness and/or body fat percentage by performing an operation by use of the detection results of the light receiving devices 3 and 4. The light receiving devices 3 and 4 are situated at different distances from the light emitting device 1.

Abstract: A conventional solid-state imaging device in which a sealing resin is applied onto a microlens has a low condensing efficiency. There are provided a photodiode 14 for receiving light, a microlens 4 made of a resin set on the photodiode 14 and having a refractive index of n3, a thin-film lens 3 formed on the microlens 4 and having a refractive index of n2, a sealing resin 2 formed on the thin-film lens 3 and having a refractive index of n1, and cover glass 1 formed on the sealing resin 2 to seal the sealing resin 2. The refractive index n2 of the thin-film lens 3 is set to a value smaller than n1 and n3. In this case, it is assumed that values of n1 and n3 are substantially equal to each other and the thin-film lens 3 is made of fluoride and/or oxide.

Abstract: In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.