Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm?3 and which consists of cells, each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.
Type:
Application
Filed:
May 5, 2005
Publication date:
October 16, 2008
Applicant:
MAX--PLANCK--GESELLSCHAFT FORDERUNG DER WISSENSCHAFTEN E.V. HOFGATEN STRASSE 8
Inventors:
Masahiro Teshima, Razmik Mirzoyan, Boris Anatolievich Dolgoshein, Sergey Nikolaevich Klemin, Elena Viktorovna Popova, Leonid Anatolievich Filatov