Abstract: The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.
Type:
Grant
Filed:
February 3, 2012
Date of Patent:
July 1, 2014
Assignee:
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V. Hofgartenstr. 8