Abstract: The present invention relates to a method for identifying and/or characterizing a (poly)peptide comprising: (a) analyzing a peptide map of said (poly)peptide, comprising at least 1 peptide, and its peptide primary structure fingerprint by mass spectrometry; and (b) comparing data obtained in step (a) with a reference (poly)peptide database, said database comprising mass spectrometric data of peptide maps, comprising at least 1 peptide, and of its peptide primary structure fingerprint, of a (poly)peptide or of a variety of (poly)peptides.

Abstract: The invention relates to novet Borrelia, and OspA antigens derived therefrom. These antigens show little homology with known OspA's and are therefore useful as vaccine and diagnostic reagents. Multicomponent vaccines based on OspA's from different Borrelia groups are also disclosed.

Abstract: The present invention provides methods of inhibiting a virus with which a vertebrate is infected and which replicates via an RNA template comprising the administration of an antisense or triplex-forming oligonucleotide or a derivative thereof capable of binding to a polypurine-rich tract in a region of single-stranded RNA or RNA-DNA hybrid, respectively. Chimeric oligonucleotides capable of forming triplex structures with single-stranded nucleic acids are also disclosed.

Abstract: The present invention provides a process for the production of a K- or Rb-.beta."- or -.beta.-aluminum oxide powder preparation, wherein a cubic densely packed aluminum oxide (.gamma.-aluminum oxide) or a precursor thereof is subjected to attrition together with a doping material or a precursor thereof, the so obtained mixture is calcined in an oxygen-containing atmosphere, potassium oxide or rubidium oxide or a precursor of these compounds is added to the calcination product obtained, the mixture is subjected to attrition and then calcined in an oxygen-containing atmosphere at a temperature greater than 900.degree. C. The present invention also provides a process for the production of a ceramic formed body in which a powder obtained by the above process is converted by attrition, isostatic pressing and sintering into a ceramic formed body. Such a ceramic formed body can be used as an ion conductor.

Abstract: A solid electrode in an electrolytic cell for rapid incorporation and exclusion of ions wandering to and from the electrode by way of an electrolyte with a minimum of voltage loss, in particular for a fuel cell, a high-performance battery, an electrochrome sign display unit or an electro-chemical storage element. The electrode comprises a structure having a higher electrical conductivity for electrons or holes than for the ions, and wherein the concentration of the electrons or holes movable within said electrode is lower than the concentration of the ions movable within the electrode.

Abstract: A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.

Abstract: To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20.degree. C. and below the recrystallization temperature, for example in the range of between 100.degree. C., preferably above 200.degree.-250.degree. C. and below about 450.degree. C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.

Abstract: To permit X-ray analysis of crystals, selectively, with respect to both pession and rotation, without repositioning of the crystal and disturbance of crystal position, a goniometer head is located in the path of a primary X-ray beam and connected to a shaft which can be stepped in rotary movement by selective engagement through precision precession drive gearing. To prevent accidental engagement of the precession drive gearing, interlocks are provided to disable energization of the motor when rotation crystal diffraction tests are being made and the shaft is locked in position by a locking screw.