Patents Assigned to Max-Planck-Institut fur Mikrostrukturphysik
  • Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6663989
    Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: December 16, 2003
    Assignee: Max-Planck-Institut fur Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele