Patents Assigned to Max-Planck-Institute für Mikrostrukturphysik
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6531235
    Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: March 11, 2003
    Assignee: Max-Planck-Institute für Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele