Abstract: A LED driving circuit applied to a LED module includes a read address generating unit, a memory cell and a driving unit. The read address generating unit receives a clock signal and outputs a reading signal. The memory cell is coupled to the read address generating unit and generates an output signal in accordance with the reading signal. The driving unit is coupled to the memory cell, receives the output signal and the clock signal and outputs a driving signal to the LED module. A LED driving device and a driving method are also disclosed.

Abstract: A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for forming a device area; and disposing a gate metal on the capping layer within the device area, wherein an interface between the gate metal and the capping layer forms a Schottky contact, and the Schottky contact is parallel connected with an impedance. The present invention also discloses a semiconductor structure for antenna switching circuit.

Abstract: A switching circuit for an antenna includes a first switching unit, a second switching unit, a third switching unit, a fourth switching unit, a first clamping unit and a second clamping unit. The first clamping unit is coupled to the first switching unit and the fourth switching unit. The first clamping unit includes a first clamping device and a first resistor, which are connected in parallel. The second clamping unit is coupled to the second switching unit and the third switching unit. The second clamping unit includes a second clamping device and a second resistor, which are connected in parallel.

Abstract: A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for forming a device area; and disposing a gate metal on the capping layer within the device area, wherein an interface between the gate metal and the capping layer forms a Schottky contact, and the Schottky contact is parallel connected with an impedance. The present invention also discloses a semiconductor structure for antenna switching circuit.