Abstract: An ion detection sensor fabrication method includes: preparing an ion-sensitive film preparation solution; preparing an ion-sensitive mixed layer preparation solution by mixing the ion-sensitive film preparation solution with graphene powder; and forming an ion-sensitive mixed layer sensitive to a target ion by applying the ion-sensitive mixed layer preparation solution to fill a gap between a source and a drain spaced apart from each other and to cover at least a portion of an upper surface of each of the source and the drain.
Type:
Grant
Filed:
October 18, 2021
Date of Patent:
July 2, 2024
Assignee:
MCK TECH CO., LTD.
Inventors:
Seung Min Cho, Min Gu Cho, Ki Soo Kim, Hong Gi Oh
Abstract: An ion detection sensor fabrication method includes: preparing an ion-sensitive film preparation solution; preparing an ion-sensitive mixed layer preparation solution by mixing the ion-sensitive film preparation solution with graphene powder; and forming an ion-sensitive mixed layer sensitive to a target ion by applying the ion-sensitive mixed layer preparation solution to fill a gap between a source and a drain spaced apart from each other and to cover at least a portion of an upper surface of each of the source and the drain.
Type:
Application
Filed:
October 18, 2021
Publication date:
November 3, 2022
Applicant:
MCK TECH CO., LTD.
Inventors:
Seung Min CHO, Min Gu CHO, Ki Soo KIM, Hong Gi OH