Abstract: The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
Type:
Grant
Filed:
June 28, 1988
Date of Patent:
November 6, 1990
Assignee:
MCNC and University of NC at Charlotte
Inventors:
Farid M. Tranjan, Thomas D. DuBois, Rudolf G. Frieser, Stephen M. Bobbio, Susan K. S. Jones