Abstract: A sensor having an inner conductor, a piezoelectric layer, and an outer conductor. The piezoelectric layer formed from a piezoelectric strip wrapped around the inner conductor and having adjacent turns wherein substantially each turn overlaps substantially fifty percent of an adjacent turn. The piezoelectric layer has a substantially uniform thickness. The outer conductor substantially surrounds the piezoelectric layer.
Abstract: A strain-sensing device comprises a metal, glass, ceramic, or plastic cell that has formed within it a diaphragm characterized by a thin layer of material bounded by a thick layer of material. A silicon strain gauge, either junction isolated or dielectric isolated, is attached directly to the diaphragm. The strain gauge has at least one sensing element that is aligned such that applied pressure to the diaphragm induces a strain in the sensing element. The silicon strain gauge has a triangular shape that is optimizes the performance and reliability of the sensor with the added benefit of making it more affordable as well.
Type:
Grant
Filed:
November 12, 1999
Date of Patent:
January 29, 2002
Assignee:
Measurement Specialties, Incorporated
Inventors:
James H. Hoffman, David E. Wagner, Gerald Lopopolo