Abstract: Disclosed is a pedestal heater block for a chemical vapor deposition machine, in which a structure intended for causing a vacuum to be applied is installed on a surface so that a wafer can be fixed by vacuum absorption, and which comprises: gas supply holes distributed to supply gas for temperature uniformity onto a back side of the wafer; and a hot wire configured to apply heat to the wafer, wherein the hot wire is installed to have higher installation density in a central part of the heater block which is a position corresponding to a central part of the wafer than that in a neighborhood part which is an outer side of the heater block.

Abstract: According to the organometallic compound of the present invention and the thin film manufactured using the same, requirements of high volatility and excellent chemical/thermal stability are satisfied, and significantly improved thin-film deposition rates are exhibited even at low temperatures. In addition, property degradation due to by-products can be improved, excellent step coverage can be realized, and a thin film which, due to having a high dielectric constant, electrically satisfies the equivalent oxide thickness (EOT) requirement while having a thickness at which tunneling does not physically occur can be implemented.

Abstract: The resent invention relates to a method for manufacturing a solar cell, the method comprising the steps of: (a) forming a lower electrode layer on a substrate; (b) forming a CIGS light absorbing layer on the lower electrode layer by supplying a copper precursor to deposit a copper thin film using chemical vapor deposition and then supplying a gallium precursor, an indium precursor, and a first selenium precursor to deposit a gallium thin film and an indium-selenium thin film using chemical vapor deposition; and (c) sequentially forming a buffer layer and a front electrode layer on the CIGS light absorbing layer.