Abstract: A dopant feeding device for releasing dopant into a feeder system during doping of a crystal growing system includes a dopant container for holding the dopant, a lower valve, and an upper valve. The dopant container includes a wall defining a lower opening for releasing the dopant therethrough. The lower valve is positioned adjacent to the lower opening and is movable between a closed position that is in contact with the wall to prevent passage of dopant through the lower opening and an open position that is spaced from the lower opening to allow passage of dopant therethrough. The upper valve is positioned above and connected to the lower valve. The upper valve is disposed within the dopant container and is movable between a first position that is spaced from the dopant container and a second position that is in contact with the dopant container.

Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.

Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.

Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.

Abstract: Systems and methods are disclosed for monitoring and controlling silicon rod temperature. One example is a method of monitoring a surface temperature of at least one silicon rod in a chemical vapor deposition (CVD) reactor during a CVD process. The method includes capturing an image of an interior of the CVD reactor. The image includes a silicon rod. The image is scanned to identify a left edge of the silicon rod and a right edge of the silicon rod. A target area is identified midway between the left edge and the right edge. A temperature of the silicon rod in the target area is determined.

Abstract: A method for machining a profile into a silicon seed rod using a machine. The silicon seed rod is capable of being used in a chemical vapor deposition polysilicon reactor. The machine includes a plurality of grinding wheels. The method includes grinding a v-shaped profile into a first end of the silicon seed rod with one of the plurality of grinding wheels and grinding a conical profile in a second end of the silicon seed rod with another of the plurality of grinding wheels.

Abstract: A tool for harvesting polycrystalline silicon-coated rods from a chemical vapor deposition reactor includes a body including outer walls sized for enclosing the rods within the outer walls. Each outer wall includes a door for allowing access to at least one of the rods.

Abstract: A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.

Abstract: A doping device for a furnace containing a melt includes an upper chamber configured to hold solid dopant particles, a lower chamber, and a feeding tube coupled between the upper chamber and the lower chamber. The feeding tube is configured to supply dopant gas from the upper chamber to the lower chamber, and the lower chamber is configured to diffuse dopant gas over a top surface of the melt.

Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.

Abstract: The invention concerns a process (and a corresponding plant) for the purification of trichlorosilane and/or silicon tetrachloride comprising the following steps of treating technical grade trichlorosilane and/or technical grade silicon tetrachloride: complexation of the boron impurities (trichloride (BCl3)) and other metallic impurities by addition of diphenylthiocarbazone and/or triphenylchloromethane, with the formation of complex macromolecules having high boiling point, first column distillation of the complexation step products, wherein the complexed boron impurities, together with other metallic impurities are removed as bottoms, and second column distillation of the tops of the previous distillation, wherein electronic grade trichlorosilane (plus dichlorosilane possible present); and/or silicon tetrachloride are obtained as tops and phosphorus chlorides (PCl3) and phosphorus containing compounds, arsenic chlorides (AsCl3) and arsenic containing compounds, aluminium compounds, antimony compounds and in

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defining an interior space adapted to receive the plurality of heated silicon rods therein. A thermal radiation shield is in the interior space generally adjacent to and in opposing relationship with the interior surface of the inner wall. The thermal radiation shield is substantially opaque to thermal radiation emitted from the plurality of heated silicon rods in the interior space of the bell jar.

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: The invention concerns a process (and a corresponding plant) for the purification of trichlorosilane and/or silicon tetrachloride comprising the following steps of treating technical grade trichlorosilane and/or technical grade silicon tetrachloride: complexation of the boron impurities (trichloride BCI3) and other metallic impurities by addition of diphenylthiocarbazone and/or triphenylchloromethane, with the formation of complex macromolecules having high boiling point, first column distillation of the complexation step products, wherein the complexed boron impurities, together with other metallic impurities are removed as bottoms, and second column distillation of the tops of the previous distillation, wherein electronic grade trichlorosilane (plus dichlorosilane possible present) and/or silicon tetrachloride are obtained as tops and phosphorus chlorides PCI3 and phosphorus containing compounds, arsenic chlorides AsCI3 and arsenic containing compounds, aluminium compounds, antimony compounds and in general

Abstract: A wire saw (10) for simultaneously slicing multiple, generally cylindrical monocrystalline ingots (14) into wafers. The wire saw includes a cutting head (16), an ingot support (12), and multiple generally parallel lengths of cutting wire (18) defining a cutting web (30). A slurry delivery system includes nozzles (34, 36, and 38) positioned for dispensing slurry along the wire web generally at lateral sides of each ingot. A process for simultaneously slicing at least two generally cylindrical semiconductor ingots into wafers includes mounting at least two ingots to a common ingot support, moving the ingot support relative to the cutting web so that the two ingots simultaneously press against the cutting web at cutting regions, and dispensing a liquid slurry to at least three locations on the wire web including two outermost sides of the cutting regions and a location between each pair of ingots.

Abstract: A method for detecting transition metal contamination in or on equipment and fluids used or being evaluated for use in the manufacture, handling, or shipping of silicon wafers and electronic devices manufactured on silicon wafers. A contamination monitor wafer having an average minority carrier lifetime greater than about 250 microseconds is processed using one or more pieces of equipment or fluids. As part of, or subsequent to the processing step, the contamination monitor wafer is exposed to a temperature of at least 600.degree. C. and the minority carrier lifetime values of the contamination monitor wafer is thereafter determined. To insure that the recombination process is dot dominated by the effects of oxygen precipitates, the contamination monitor wafer should have an oxygen precipitate density of less than 10.sup.8 oxygen precipitates per cubic centimeter before and after being exposed to said temperature of at least 600.degree. C.