Abstract: A parallel flash memory controller, a chip, and a control method thereof are disclosed. First, an on-chip control bus sends flash memory control instructions in parallel to instruction parsing units (211) according to channels. Next, the instruction parsing units store (211) and parse the flash memory instructions corresponding to the flash memory channels, and sequentially send the flash memory control instruction to the flash memory control units (213). Then, the flash memory control units (213) send control instructions to the flash chips in the channels according to rows, and then the control instructions are processed in parallel in flash memory rows. In the present invention, the operations for each channel are performed independently in parallel, the flash memory control units (213) in the channels send the control instructions in series, and meanwhile, in each flash memory row, operations are concurrently performed in parallel.

Abstract: A flash memory data read/write processing method is provided. The method includes the following steps. An encoding process is performed on the data to be written so that a number of a specific value in the encoded data is reduced compared with that in the original data, and the encoded data is written into a flash memory chip. The encoded data in the flash memory chip is read out, then a decoding process corresponding to the encoding process in Step 1 is performed on the read data, and finally, the decoded data is output. This method may reduce the consumption of a flash memory chip due to writing and erasing operations, thereby prolonging the operating life span of the flash memory chip. This method may also increase the efficiency of writing and erasing operations, reduce the operating time, as well as reduce the power consumption of flash memory operations.

Abstract: A method for managing blocks in a flash memory is provided, which includes dynamic and static block managing methods. In the dynamic block managing method, a blank block is selected as a swap block for write operation. During each write operation, new data and/or original data in an object block to be operated are written into the swap block, and the object block is erased. Then, a logical address of the object block is changed to be a logical address of the swap block, so that the object block served as the swap block for a next write operation. In the static block managing method, a variable seed parameter is set. Different values of the seed parameter are each associated with a logical address of a respective flash memory block.